Diod - Pembetulan - Bujang

D2700U45X122XOSA1

bahagian bahagian: 287

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 4500V, Semasa - Rata-rata Disahkan (Io): 2900A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

D2601NH90TXPSA1

bahagian bahagian: 324

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 9000V, Semasa - Rata-rata Disahkan (Io): 1790A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 5.5V @ 4000A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

D1961SH45TXPSA1

bahagian bahagian: 307

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 4500V, Semasa - Rata-rata Disahkan (Io): 2380A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 2500A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

D2601N85TXPSA1

bahagian bahagian: 304

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 8500V, Semasa - Rata-rata Disahkan (Io): 3040A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

IRD3CH9DD6

bahagian bahagian: 5330

IDP45E60XKSA1

bahagian bahagian: 38822

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 71A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2V @ 45A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

IDP23011XUMA1

bahagian bahagian: 34916

IDK04G65C5XTMA1

bahagian bahagian: 2364

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 4A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IRD3CH53DB6

bahagian bahagian: 2397

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.7V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 270ns,

IDW16G65C5XKSA1

bahagian bahagian: 9090

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 16A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 16A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IRD3CH9DB6

bahagian bahagian: 2378

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.7V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 154ns,

IRD3CH16DD6

bahagian bahagian: 2386

IDFW40E65D1EXKSA1

bahagian bahagian: 1902

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 42A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.1V @ 40A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 76ns,

IRD3CH42DD6

bahagian bahagian: 2407

IRD3CH101DD6

bahagian bahagian: 2319

IDW40E65D2FKSA1

bahagian bahagian: 30469

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.3V @ 40A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

IRD3CH82DF6

bahagian bahagian: 2356

IRD3CH16DB6

bahagian bahagian: 2357

IRD3CH5BD6

bahagian bahagian: 5238

IDC08S60CEX1SA3

bahagian bahagian: 2424

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 8A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDH08G120C5XKSA1

bahagian bahagian: 10387

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.95V @ 8A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDK02G65C5XTMA1

bahagian bahagian: 2297

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 2A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 2A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDH20G65C5XKSA2

bahagian bahagian: 7574

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 20A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 20A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDL12G65C5XUMA1

bahagian bahagian: 2364

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 12A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 12A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IRD3CH31DB6

bahagian bahagian: 2327

IDB10S60CATMA2

bahagian bahagian: 5332

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IRD3CH42DB6

bahagian bahagian: 2339

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 75A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.7V @ 75A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 285ns,

IRD3CH82DD6

bahagian bahagian: 2324

IRD3CH11DB6

bahagian bahagian: 2369

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.7V @ 25A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 190ns,

IDK08G65C5XTMA1

bahagian bahagian: 2324

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 8A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IRD3CH5DB6

bahagian bahagian: 5234

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.7V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 96ns,

IDP08E65D2XKSA1

bahagian bahagian: 68501

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.3V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 40ns,

IDL10G65C5XUMA1

bahagian bahagian: 2296

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDC04S60CEX1SA1

bahagian bahagian: 2355

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 4A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDK03G65C5XTMA1

bahagian bahagian: 2298

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 3A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDK05G65C5XTMA1

bahagian bahagian: 2285

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,