Diod - Pembetulan - Bujang

IDC05S60CEX1SA1

bahagian bahagian: 2377

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDH02G65C5XKSA1

bahagian bahagian: 5266

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 2A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 2A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDK09G65C5XTMA1

bahagian bahagian: 2371

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 9A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 9A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDC08S60CEX1SA2

bahagian bahagian: 2399

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 8A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDL02G65C5XUMA1

bahagian bahagian: 2331

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 2A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 2A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDP30E120XKSA1

bahagian bahagian: 34878

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 50A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.15V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 243ns,

IDB06S60CATMA2

bahagian bahagian: 2626

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IRD3CH101DB6

bahagian bahagian: 2341

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.7V @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 360ns,

IRD3CH24DF6

bahagian bahagian: 2382

IDK12G65C5XTMA1

bahagian bahagian: 2311

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 12A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 12A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDC04S60CEX7SA1

bahagian bahagian: 2434

IDL04G65C5XUMA1

bahagian bahagian: 2353

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 4A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDW75E60FKSA1

bahagian bahagian: 1516

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2V @ 75A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 121ns,

IDK06G65C5XTMA1

bahagian bahagian: 2335

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IRD3CH11DF6

bahagian bahagian: 2342

IDW40G65C5XKSA1

bahagian bahagian: 4319

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 40A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 40A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDC08S60CEX7SA1

bahagian bahagian: 2440

IDW15S120FKSA1

bahagian bahagian: 2436

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 15A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 15A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDH12G65C5XKSA1

bahagian bahagian: 2289

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 12A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 12A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

D1050N14TXPSA1

bahagian bahagian: 2299

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1400V, Semasa - Rata-rata Disahkan (Io): 1050A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1000A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

IDH12G65C6XKSA1

bahagian bahagian: 12700

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 27A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.35V @ 12A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IRD3CH82DB6

bahagian bahagian: 5258

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.7V @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 355ns,

IDL08G65C5XUMA1

bahagian bahagian: 2367

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 8A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IRD3CH24DD6

bahagian bahagian: 5312

IDW15E65D2FKSA1

bahagian bahagian: 41876

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.3V @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 47ns,

IRD3CH53DF6

bahagian bahagian: 2322

D1050N16TXPSA1

bahagian bahagian: 2266

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1600V, Semasa - Rata-rata Disahkan (Io): 1050A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1000A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

IDH20G65C6XKSA1

bahagian bahagian: 8465

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 41A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.35V @ 20A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IRD3CH24DB6

bahagian bahagian: 5317

IRD3CH16DF6

bahagian bahagian: 2362

IDW10G65C5XKSA1

bahagian bahagian: 12731

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IRD3CH101DF6

bahagian bahagian: 2365

IDK10G65C5XTMA1

bahagian bahagian: 2337

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDH16G120C5XKSA1

bahagian bahagian: 6043

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 16A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.95V @ 16A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IRD3CH31DF6

bahagian bahagian: 2321

IRD3CH42DF6

bahagian bahagian: 2347