Diod - Pembetulan - Bujang

IRD3CH31DD6

bahagian bahagian: 2359

D770N14TXPSA1

bahagian bahagian: 2110

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1400V, Semasa - Rata-rata Disahkan (Io): 770A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.08V @ 400A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

IDV30E65D2XKSA1

bahagian bahagian: 46154

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 30A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.2V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 42ns,

IDV20E65D1XKSA1

bahagian bahagian: 47923

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 28A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 42ns,

IDH08G65C6XKSA1

bahagian bahagian: 18927

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 20A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.35V @ 8A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

D770N12TXPSA1

bahagian bahagian: 2033

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 770A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.08V @ 400A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

D1050N12TXPSA1

bahagian bahagian: 2267

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 1050A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1000A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

IDP08E65D1XKSA1

bahagian bahagian: 67894

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 80ns,

D770N20TXPSA1

bahagian bahagian: 2099

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 2000V, Semasa - Rata-rata Disahkan (Io): 770A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.08V @ 400A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

D820N20TXPSA1

bahagian bahagian: 2264

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 2000V, Semasa - Rata-rata Disahkan (Io): 820A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 750A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

IDH05G120C5XKSA1

bahagian bahagian: 13098

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDH10G120C5XKSA1

bahagian bahagian: 8281

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDP15E65D2XKSA1

bahagian bahagian: 59599

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.3V @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 47ns,

IDW12G65C5XKSA1

bahagian bahagian: 12018

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 12A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 12A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDH20G120C5XKSA1

bahagian bahagian: 4502

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 56A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 20A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDV06S60CXKSA1

bahagian bahagian: 1555

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

HFA15PB60PBF

bahagian bahagian: 26323

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 60ns,

IDH06G65C5XKSA1

bahagian bahagian: 1624

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDW30G65C5FKSA1

bahagian bahagian: 1668

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 30A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 30A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDW10G65C5FKSA1

bahagian bahagian: 1640

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDB12E120ATMA1

bahagian bahagian: 1490

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 28A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.15V @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

IDP09E120

bahagian bahagian: 1554

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 23A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.15V @ 9A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

IDH20G65C5XKSA1

bahagian bahagian: 1630

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 20A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 20A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDB23E60ATMA1

bahagian bahagian: 1521

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 41A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2V @ 23A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

IDD03SG60CXTMA1

bahagian bahagian: 1478

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.3V @ 3A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDB15E60

bahagian bahagian: 1514

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 29.2A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2V @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 87ns,

IDH03G65C5XKSA1

bahagian bahagian: 1609

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 3A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDV05S60CXKSA1

bahagian bahagian: 1514

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDW16G65C5FKSA1

bahagian bahagian: 5259

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 16A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 16A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDP06E60

bahagian bahagian: 1466

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 14.7A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2V @ 6A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 70ns,

IDH08G65C5XKSA1

bahagian bahagian: 1682

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 8A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDB45E60ATMA1

bahagian bahagian: 1500

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 71A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2V @ 45A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

IDW12G65C5FKSA1

bahagian bahagian: 1666

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 12A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 12A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDH09G65C5XKSA1

bahagian bahagian: 1642

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 9A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 9A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDH10G65C6XKSA1

bahagian bahagian: 15125

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 24A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.35V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

IDV30E60C

bahagian bahagian: 5572

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 21A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.05V @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 130ns,