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Diod - Pembetulan - Bujang

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IDH15S120AKSA1
Infineon Technologies

IDH15S120AKSA1

bahagian bahagian: 889

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 15A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 15A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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IDD12SG60CXTMA1
Infineon Technologies

IDD12SG60CXTMA1

bahagian bahagian: 20456

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 12A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.1V @ 12A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan
IDH04SG60CXKSA1
Infineon Technologies

IDH04SG60CXKSA1

bahagian bahagian: 817

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.3V @ 4A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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IDH05S120AKSA1
Infineon Technologies

IDH05S120AKSA1

bahagian bahagian: 891

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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IDH03SG60CXKSA1
Infineon Technologies

IDH03SG60CXKSA1

bahagian bahagian: 855

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.3V @ 3A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan
IDH05SG60CXKSA1
Infineon Technologies

IDH05SG60CXKSA1

bahagian bahagian: 839

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.3V @ 5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan
IDH02SG120XKSA1
Infineon Technologies

IDH02SG120XKSA1

bahagian bahagian: 831

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 2A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 2A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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IDH10SG60CXKSA1
Infineon Technologies

IDH10SG60CXKSA1

bahagian bahagian: 816

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.1V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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IDD06SG60CXTMA1
Infineon Technologies

IDD06SG60CXTMA1

bahagian bahagian: 813

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.3V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan
IDH10S120AKSA1
Infineon Technologies

IDH10S120AKSA1

bahagian bahagian: 888

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan
IDH08S120AKSA1
Infineon Technologies

IDH08S120AKSA1

bahagian bahagian: 810

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 7.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 7.5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan
IDH12SG60CXKSA1
Infineon Technologies

IDH12SG60CXKSA1

bahagian bahagian: 900

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 12A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.1V @ 12A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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IDB06S60C
Infineon Technologies

IDB06S60C

bahagian bahagian: 5151

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan
IDD08SG60CXTMA1
Infineon Technologies

IDD08SG60CXTMA1

bahagian bahagian: 811

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.1V @ 8A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan
IDH06SG60CXKSA1
Infineon Technologies

IDH06SG60CXKSA1

bahagian bahagian: 5122

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.3V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan
IDV02S60CXKSA1
Infineon Technologies

IDV02S60CXKSA1

bahagian bahagian: 828

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 2A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 2A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan
IDH09SG60CXKSA1
Infineon Technologies

IDH09SG60CXKSA1

bahagian bahagian: 812

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 9A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.1V @ 9A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan
IDB10S60C
Infineon Technologies

IDB10S60C

bahagian bahagian: 875

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan
IDD04SG60CXTMA1
Infineon Technologies

IDD04SG60CXTMA1

bahagian bahagian: 834

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 5.6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.3V @ 4A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan
IDH06S60CAKSA1
Infineon Technologies

IDH06S60CAKSA1

bahagian bahagian: 502

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan
SIDC06D60C6
Infineon Technologies

SIDC06D60C6

bahagian bahagian: 477

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 20A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.95V @ 20A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan
SIDC78D170HX1SA1
Infineon Technologies

SIDC78D170HX1SA1

bahagian bahagian: 521

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1700V, Semasa - Rata-rata Disahkan (Io): 150A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan
IDH04S60CAKSA1
Infineon Technologies

IDH04S60CAKSA1

bahagian bahagian: 556

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 4A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan
SIDC09D60E6X1SA1
Infineon Technologies

SIDC09D60E6X1SA1

bahagian bahagian: 552

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 20A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

Senarai harapan
SIDC30D60E6X1SA1
Infineon Technologies

SIDC30D60E6X1SA1

bahagian bahagian: 571

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 75A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 75A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan
SIDC73D170E6X1SA2
Infineon Technologies

SIDC73D170E6X1SA2

bahagian bahagian: 517

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1700V, Semasa - Rata-rata Disahkan (Io): 100A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.15V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan
SIDC16D60SIC3
Infineon Technologies

SIDC16D60SIC3

bahagian bahagian: 502

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

Senarai harapan
SIDC56D120E6X1SA1
Infineon Technologies

SIDC56D120E6X1SA1

bahagian bahagian: 5106

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 75A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 75A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan
SIDC23D120F6X1SA1
Infineon Technologies

SIDC23D120F6X1SA1

bahagian bahagian: 552

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 25A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.1V @ 25A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan
SIDC09D60E6YX1SA1
Infineon Technologies

SIDC09D60E6YX1SA1

bahagian bahagian: 523

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 20A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

Senarai harapan
SIDC08D60C6Y
Infineon Technologies

SIDC08D60C6Y

bahagian bahagian: 497

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 30A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.95V @ 30A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan
SIDC14D60C6Y
Infineon Technologies

SIDC14D60C6Y

bahagian bahagian: 543

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 50A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 50A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan
SIDC08D120H6X1SA1
Infineon Technologies

SIDC08D120H6X1SA1

bahagian bahagian: 504

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 10A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan
SIDC56D170E6X1SA1
Infineon Technologies

SIDC56D170E6X1SA1

bahagian bahagian: 577

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1700V, Semasa - Rata-rata Disahkan (Io): 75A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.15V @ 75A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan
SIDC09D60E6 UNSAWN
Infineon Technologies

SIDC09D60E6 UNSAWN

bahagian bahagian: 518

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 20A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

Senarai harapan
SIDC02D60F6X1SA1
Infineon Technologies

SIDC02D60F6X1SA1

bahagian bahagian: 525

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan