Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 7

APTM10TAM19FPG

bahagian bahagian: 905

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTC60TAM35PG

bahagian bahagian: 622

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 72A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 5.4mA,

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Microsemi Corporation

APTM20AM10STG

bahagian bahagian: 814

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 175A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTC60HM70SCTG

bahagian bahagian: 825

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

APTM20HM20STG

bahagian bahagian: 874

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 89A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 44.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60AM35T1G

bahagian bahagian: 1737

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 72A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 5.4mA,

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Microsemi Corporation

APTM120A20SG

bahagian bahagian: 517

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 25A, 10V, Vgs (th) (Maks) @ Id: 5V @ 6mA,

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Microsemi Corporation

APTMC60TLM14CAG

bahagian bahagian: 121

Jenis FET: 4 N-Channel (Three Level Inverter), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 219A (Tc), Rds On (Maks) @ Id, Vgs: 12 mOhm @ 150A, 20V, Vgs (th) (Maks) @ Id: 2.4V @ 30mA (Typ),

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Microsemi Corporation

APTM20DUM04G

bahagian bahagian: 485

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 372A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 186A, 10V, Vgs (th) (Maks) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTMC120AM12CT3AG

bahagian bahagian: 202

Jenis FET: 2 N Channel (Phase Leg), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 220A (Tc), Rds On (Maks) @ Id, Vgs: 12 mOhm @ 150A, 20V, Vgs (th) (Maks) @ Id: 2.4V @ 30mA (Typ),

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Microsemi Corporation

APTC60TAM21SCTPAG

bahagian bahagian: 341

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 116A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 88A, 10V, Vgs (th) (Maks) @ Id: 3.6V @ 6mA,

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Microsemi Corporation

APTM100A23STG

bahagian bahagian: 772

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A, Rds On (Maks) @ Id, Vgs: 270 mOhm @ 18A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTC60AM24T1G

bahagian bahagian: 1322

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 95A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTMC120TAM17CTPAG

bahagian bahagian: 81

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 147A (Tc), Rds On (Maks) @ Id, Vgs: 17 mOhm @ 100A, 20V, Vgs (th) (Maks) @ Id: 2.4V @ 20mA (Typ),

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Microsemi Corporation

APTM60H23FT1G

bahagian bahagian: 2039

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 276 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM50AM38FTG

bahagian bahagian: 808

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM120A29FTG

bahagian bahagian: 635

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A, Rds On (Maks) @ Id, Vgs: 348 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM50DHM38G

bahagian bahagian: 726

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20DUM08TG

bahagian bahagian: 866

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 208A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM10AM02FG

bahagian bahagian: 400

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 495A, Rds On (Maks) @ Id, Vgs: 2.5 mOhm @ 200A, 10V, Vgs (th) (Maks) @ Id: 4V @ 10mA,

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Microsemi Corporation

APTM10DSKM09T3G

bahagian bahagian: 1457

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 139A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTC60BBM24T3G

bahagian bahagian: 1133

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 95A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTML602U12R020T3AG

bahagian bahagian: 485

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 45A, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 22.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTC60HM70BT3G

bahagian bahagian: 1289

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

APTM20HM16FTG

bahagian bahagian: 748

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 104A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM20AM10FTG

bahagian bahagian: 856

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 175A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTMC120AM09CT3AG

bahagian bahagian: 162

Jenis FET: 2 N Channel (Phase Leg), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 295A (Tc), Rds On (Maks) @ Id, Vgs: 9 mOhm @ 200A, 20V, Vgs (th) (Maks) @ Id: 2.4V @ 40mA (Typ),

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Microsemi Corporation

APTC60DDAM70T1G

bahagian bahagian: 2258

Jenis FET: 2 N Channel (Dual Buck Chopper), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

APTC60AM45BC1G

bahagian bahagian: 1478

Jenis FET: 3 N Channel (Phase Leg + Boost Chopper), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 49A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 3mA,

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Microsemi Corporation

APTM10TAM09FPG

bahagian bahagian: 558

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 139A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM100DSK35T3G

bahagian bahagian: 1267

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A, Rds On (Maks) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60AM45B1G

bahagian bahagian: 1093

Jenis FET: 3 N Channel (Phase Leg + Boost Chopper), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 49A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 3mA,

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Microsemi Corporation

APTM100H46FT3G

bahagian bahagian: 1492

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 19A, Rds On (Maks) @ Id, Vgs: 552 mOhm @ 16A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50HM75FTG

bahagian bahagian: 809

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 46A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60HM24T3G

bahagian bahagian: 757

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Super Junction, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 95A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTM100AM90FG

bahagian bahagian: 379

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 78A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 39A, 10V, Vgs (th) (Maks) @ Id: 5V @ 10mA,

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