bahagian bahagian: 222
Jenis FET: 4 N-Channel (Three Level Inverter), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 48A (Tc), Rds On (Maks) @ Id, Vgs: 49 mOhm @ 40A, 20V, Vgs (th) (Maks) @ Id: 2.2V @ 2mA (Typ),