Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 7

APTM100DU18TG

bahagian bahagian: 2809

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 43A, Rds On (Maks) @ Id, Vgs: 210 mOhm @ 21.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM100DDA35T3G

bahagian bahagian: 2731

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A, Rds On (Maks) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100A46FT1G

bahagian bahagian: 2813

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 19A, Rds On (Maks) @ Id, Vgs: 552 mOhm @ 16A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100A40FT1G

bahagian bahagian: 2805

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 21A, Rds On (Maks) @ Id, Vgs: 480 mOhm @ 18A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100A12STG

bahagian bahagian: 2822

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 68A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 34A, 10V, Vgs (th) (Maks) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM100A23SCTG

bahagian bahagian: 2760

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A, Rds On (Maks) @ Id, Vgs: 270 mOhm @ 18A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM08TDUM04PG

bahagian bahagian: 2746

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 60A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTC80H29T1G

bahagian bahagian: 2742

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 1mA,

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Microsemi Corporation

APTC80DSK29T3G

bahagian bahagian: 2793

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 1mA,

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Microsemi Corporation

APTC80H29SCTG

bahagian bahagian: 1092

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 1mA,

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Microsemi Corporation

APTC80DDA29T3G

bahagian bahagian: 2788

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 1mA,

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Microsemi Corporation

APTC80A15T1G

bahagian bahagian: 2799

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTC80AM75SCG

bahagian bahagian: 594

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 56A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 28A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 4mA,

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Microsemi Corporation

APTC80A10SCTG

bahagian bahagian: 863

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 42A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 21A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 3mA,

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Microsemi Corporation

APTC60DSKM70T3G

bahagian bahagian: 2751

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

APTC60DSKM35T3G

bahagian bahagian: 2727

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 72A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 5.4mA,

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Microsemi Corporation

APTC60DDAM70T3G

bahagian bahagian: 2741

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

APTC60AM70T1G

bahagian bahagian: 2769

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

JANTXV2N7334

bahagian bahagian: 2993

Jenis FET: 4 N-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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Microsemi Corporation

JANTX2N7335

bahagian bahagian: 2875

Jenis FET: 4 P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 750mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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Microsemi Corporation

JAN2N7335

bahagian bahagian: 2942

Jenis FET: 4 P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 750mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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Microsemi Corporation

JAN2N7334

bahagian bahagian: 2865

Jenis FET: 4 N-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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Microsemi Corporation

JANTXV2N7335

bahagian bahagian: 2903

Jenis FET: 4 P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 750mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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Microsemi Corporation

JANTX2N7334

bahagian bahagian: 2911

Jenis FET: 4 N-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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