Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 7

APTM50DUM25TG

bahagian bahagian: 2781

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 149A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 74.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 8mA,

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Microsemi Corporation

APTM50DUM35TG

bahagian bahagian: 2820

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 99A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM50DUM19G

bahagian bahagian: 2832

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 163A, Rds On (Maks) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM50DUM17G

bahagian bahagian: 2758

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 90A, 10V, Vgs (th) (Maks) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM50DSKM65T3G

bahagian bahagian: 3279

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 51A, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50DHM75TG

bahagian bahagian: 2739

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 46A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50DSK10T3G

bahagian bahagian: 2805

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 37A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM50DHM65TG

bahagian bahagian: 3354

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 51A, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50AM25FTG

bahagian bahagian: 2755

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 149A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 74.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 8mA,

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Microsemi Corporation

APTM50AM70FT1G

bahagian bahagian: 2771

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A, Rds On (Maks) @ Id, Vgs: 84 mOhm @ 42A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50A15FT1G

bahagian bahagian: 2761

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 21A, 10V, Vgs (th) (Maks) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM50AM19STG

bahagian bahagian: 2747

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 85A, 10V, Vgs (th) (Maks) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM20DUM10TG

bahagian bahagian: 2803

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 175A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20TDUM16PG

bahagian bahagian: 2825

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 104A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM20DUM05TG

bahagian bahagian: 2827

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 333A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 166.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 8mA,

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Microsemi Corporation

APTM20DHM10G

bahagian bahagian: 2785

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 175A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20DHM16TG

bahagian bahagian: 2733

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 104A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM20DHM08G

bahagian bahagian: 2824

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 208A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20AM05FTG

bahagian bahagian: 2762

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 333A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 166.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 8mA,

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Microsemi Corporation

APTM120TDU57PG

bahagian bahagian: 2732

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A, Rds On (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120H57FT3G

bahagian bahagian: 2766

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A, Rds On (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120DU29TG

bahagian bahagian: 2792

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A, Rds On (Maks) @ Id, Vgs: 348 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM120DSK57T3G

bahagian bahagian: 2791

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A, Rds On (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120A80FT1G

bahagian bahagian: 2744

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A, Rds On (Maks) @ Id, Vgs: 960 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120DDA57T3G

bahagian bahagian: 2827

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A, Rds On (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120A65FT1G

bahagian bahagian: 2750

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, Rds On (Maks) @ Id, Vgs: 780 mOhm @ 14A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM10TDUM19PG

bahagian bahagian: 2820

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTM10TDUM09PG

bahagian bahagian: 2746

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 139A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM10HM09FTG

bahagian bahagian: 2809

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 139A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM10DUM05TG

bahagian bahagian: 2783

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 278A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs (th) (Maks) @ Id: 4V @ 5mA,

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Microsemi Corporation

APTM10DHM09TG

bahagian bahagian: 2789

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 139A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM10DDAM19T3G

bahagian bahagian: 2824

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTM100TDU35PG

bahagian bahagian: 2796

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A, Rds On (Maks) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM10DDAM09T3G

bahagian bahagian: 2768

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 139A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM100DUM90G

bahagian bahagian: 2758

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 78A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 39A, 10V, Vgs (th) (Maks) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM100H80FT1G

bahagian bahagian: 2809

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A, Rds On (Maks) @ Id, Vgs: 960 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 5V @ 1mA,

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