Transistor - FET, MOSFET - Susunan

APTC60TDUM35PG

bahagian bahagian: 688

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 72A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 5.4mA,

APTM10AM05FTG

bahagian bahagian: 820

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 278A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs (th) (Maks) @ Id: 4V @ 5mA,

APTC60HM70RT3G

bahagian bahagian: 1479

Jenis FET: 4 N-Channel (H-Bridge) + Bridge Rectifier, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2.7mA,

APTC60HM45T1G

bahagian bahagian: 1300

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 49A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 3mA,

APTC80TA15PG

bahagian bahagian: 1022

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2mA,

APTC80H29T3G

bahagian bahagian: 2362

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 1mA,

APTM50HM75SCTG

bahagian bahagian: 667

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 46A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

APTMC120AM20CT1AG

bahagian bahagian: 173

Jenis FET: 2 N Channel (Phase Leg), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 143A (Tc), Rds On (Maks) @ Id, Vgs: 17 mOhm @ 100A, 20V, Vgs (th) (Maks) @ Id: 2.3V @ 2mA (Typ),

APTM120A20DG

bahagian bahagian: 538

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 25A, 10V, Vgs (th) (Maks) @ Id: 5V @ 6mA,

APTC60AM45T1G

bahagian bahagian: 293

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 49A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 3mA,

APTMC120TAM34CT3AG

bahagian bahagian: 251

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 74A (Tc), Rds On (Maks) @ Id, Vgs: 34 mOhm @ 50A, 20V, Vgs (th) (Maks) @ Id: 4V @ 15mA,

APTM50DDAM65T3G

bahagian bahagian: 1269

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 51A, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

APTC60DDAM24T3G

bahagian bahagian: 1114

Jenis FET: 2 N Channel (Dual Buck Chopper), Ciri FET: Super Junction, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 95A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 5mA,

APTM10DSKM19T3G

bahagian bahagian: 1965

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

APTM20AM06SG

bahagian bahagian: 553

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300A, Rds On (Maks) @ Id, Vgs: 7.2 mOhm @ 150A, 10V, Vgs (th) (Maks) @ Id: 5V @ 6mA,

APTC60DDAM45T1G

bahagian bahagian: 1722

Jenis FET: 2 N Channel (Dual Buck Chopper), Ciri FET: Super Junction, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 49A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 3mA,

APTM100H18FG

bahagian bahagian: 404

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 43A, Rds On (Maks) @ Id, Vgs: 210 mOhm @ 21.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

APTM100H35FT3G

bahagian bahagian: 784

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A, Rds On (Maks) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

APTM20TAM16FPG

bahagian bahagian: 537

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 104A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

APTM20AM08FTG

bahagian bahagian: 774

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 208A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

APTC80A15SCTG

bahagian bahagian: 987

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 2mA,

APTM10DHM05G

bahagian bahagian: 750

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 278A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs (th) (Maks) @ Id: 4V @ 5mA,

APTM50HM75STG

bahagian bahagian: 723

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 46A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

APTM20AM04FG

bahagian bahagian: 346

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 372A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 186A, 10V, Vgs (th) (Maks) @ Id: 5V @ 10mA,

APTC60AM18SCG

bahagian bahagian: 415

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 143A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 71.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 4mA,

APTM100A13SG

bahagian bahagian: 445

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 65A, Rds On (Maks) @ Id, Vgs: 156 mOhm @ 32.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 6mA,

APTM50AM24SG

bahagian bahagian: 446

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 75A, 10V, Vgs (th) (Maks) @ Id: 5V @ 6mA,

APTMC120AM55CT1AG

bahagian bahagian: 412

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 55A (Tc), Rds On (Maks) @ Id, Vgs: 49 mOhm @ 40A, 20V, Vgs (th) (Maks) @ Id: 2.2V @ 2mA (Typ),

APTM120H57FTG

bahagian bahagian: 3119

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A, Rds On (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

APTM50DHM35G

bahagian bahagian: 3087

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 99A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Maks) @ Id: 5V @ 5mA,

APTMC120HRM40CT3AG

bahagian bahagian: 3001

Jenis FET: 2 N-Channel (Dual), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 73A (Tc), Rds On (Maks) @ Id, Vgs: 34 mOhm @ 50A, 20V, Vgs (th) (Maks) @ Id: 3V @ 12.5mA,

APTC60DSKM45CT1G

bahagian bahagian: 2944

Jenis FET: 2 N-Channel (Dual), Ciri FET: Super Junction, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 49A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 3mA,

APTM20DHM16T3G

bahagian bahagian: 2948

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 104A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

APTM100VDA35T3G

bahagian bahagian: 3387

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1000V (1kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A, Rds On (Maks) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Maks) @ Id: 5V @ 2.5mA,

APTJC120AM25VCT1AG

bahagian bahagian: 3378

APTMC120HR11CT3AG

bahagian bahagian: 2997

Jenis FET: 2 N-Channel (Dual), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 26A (Tc), Rds On (Maks) @ Id, Vgs: 98 mOhm @ 20A, 20V, Vgs (th) (Maks) @ Id: 3V @ 5mA,