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Diod - Zener - Bujang

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  • Diod - Zener - Bujang
BZV55B8V2 L1G
Taiwan Semiconductor Corporation

BZV55B8V2 L1G

bahagian bahagian: 225

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 6.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55B33 L0G
Taiwan Semiconductor Corporation

BZV55B33 L0G

bahagian bahagian: 160

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 24V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55B2V4 L1G
Taiwan Semiconductor Corporation

BZV55B2V4 L1G

bahagian bahagian: 203

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55B11 L1G
Taiwan Semiconductor Corporation

BZT55B11 L1G

bahagian bahagian: 177

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C15 L1G
Taiwan Semiconductor Corporation

BZV55C15 L1G

bahagian bahagian: 253

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55C3V0 L1G
Taiwan Semiconductor Corporation

BZT55C3V0 L1G

bahagian bahagian: 172

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 4µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C5V1 L1G
Taiwan Semiconductor Corporation

BZV55C5V1 L1G

bahagian bahagian: 189

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 35 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C2V4 L0G
Taiwan Semiconductor Corporation

BZV55C2V4 L0G

bahagian bahagian: 213

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B68 L0G
Taiwan Semiconductor Corporation

BZV55B68 L0G

bahagian bahagian: 227

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 160 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 51V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55C47 L1G
Taiwan Semiconductor Corporation

BZT55C47 L1G

bahagian bahagian: 167

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 110 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 35V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B5V6 L1G
Taiwan Semiconductor Corporation

BZT55B5V6 L1G

bahagian bahagian: 180

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B24 L0G
Taiwan Semiconductor Corporation

BZV55B24 L0G

bahagian bahagian: 181

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 18V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55B18 L1G
Taiwan Semiconductor Corporation

BZV55B18 L1G

bahagian bahagian: 207

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 13V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C43 L1G
Taiwan Semiconductor Corporation

BZV55C43 L1G

bahagian bahagian: 167

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 32V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B30 L0G
Taiwan Semiconductor Corporation

BZV55B30 L0G

bahagian bahagian: 179

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 22V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55C47 L1G
Taiwan Semiconductor Corporation

BZV55C47 L1G

bahagian bahagian: 183

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 110 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 35V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55C22 L1G
Taiwan Semiconductor Corporation

BZT55C22 L1G

bahagian bahagian: 161

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 16V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B13 L1G
Taiwan Semiconductor Corporation

BZV55B13 L1G

bahagian bahagian: 196

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 26 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZV55B16 L0G
Taiwan Semiconductor Corporation

BZV55B16 L0G

bahagian bahagian: 194

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 12V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55C12 L1G
Taiwan Semiconductor Corporation

BZT55C12 L1G

bahagian bahagian: 251

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 9.1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B22 L1G
Taiwan Semiconductor Corporation

BZV55B22 L1G

bahagian bahagian: 208

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 16V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55B68 L1G
Taiwan Semiconductor Corporation

BZT55B68 L1G

bahagian bahagian: 155

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 160 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 51V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55C20 L1G
Taiwan Semiconductor Corporation

BZT55C20 L1G

bahagian bahagian: 219

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C39 L1G
Taiwan Semiconductor Corporation

BZV55C39 L1G

bahagian bahagian: 244

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 28V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX85C22 R0G
Taiwan Semiconductor Corporation

BZX85C22 R0G

bahagian bahagian: 226

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 16V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZV55C12 L1G
Taiwan Semiconductor Corporation

BZV55C12 L1G

bahagian bahagian: 187

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 9.1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55C39 L1G
Taiwan Semiconductor Corporation

BZT55C39 L1G

bahagian bahagian: 171

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 28V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

Senarai harapan
BZV55B75 L0G
Taiwan Semiconductor Corporation

BZV55B75 L0G

bahagian bahagian: 171

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 170 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 56V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55C6V2 L1G
Taiwan Semiconductor Corporation

BZT55C6V2 L1G

bahagian bahagian: 164

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55B7V5 L1G
Taiwan Semiconductor Corporation

BZV55B7V5 L1G

bahagian bahagian: 159

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55C4V3 L1G
Taiwan Semiconductor Corporation

BZT55C4V3 L1G

bahagian bahagian: 225

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 75 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

Senarai harapan
BZV55B47 L0G
Taiwan Semiconductor Corporation

BZV55B47 L0G

bahagian bahagian: 179

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 110 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 35V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55C75 L1G
Taiwan Semiconductor Corporation

BZT55C75 L1G

bahagian bahagian: 221

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 170 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 56V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX85C27 R0G
Taiwan Semiconductor Corporation

BZX85C27 R0G

bahagian bahagian: 211

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 20V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZX85C9V1 R0G
Taiwan Semiconductor Corporation

BZX85C9V1 R0G

bahagian bahagian: 241

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 6.9V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

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BZX85C43 R0G
Taiwan Semiconductor Corporation

BZX85C43 R0G

bahagian bahagian: 240

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 30V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10mA,

Senarai harapan