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Diod - Zener - Bujang

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BZV55B6V2 L0G
Taiwan Semiconductor Corporation

BZV55B6V2 L0G

bahagian bahagian: 208

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 100mA,

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BZT55B9V1 L1G
Taiwan Semiconductor Corporation

BZT55B9V1 L1G

bahagian bahagian: 210

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 6.8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZV55C33 L0G
Taiwan Semiconductor Corporation

BZV55C33 L0G

bahagian bahagian: 154

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 24V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B10 L1G
Taiwan Semiconductor Corporation

BZT55B10 L1G

bahagian bahagian: 253

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55B33 L1G
Taiwan Semiconductor Corporation

BZT55B33 L1G

bahagian bahagian: 157

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 24V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT55C6V8 L0G
Taiwan Semiconductor Corporation

BZT55C6V8 L0G

bahagian bahagian: 225

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX84C27 RFG
Taiwan Semiconductor Corporation

BZX84C27 RFG

bahagian bahagian: 202

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 18.9V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B2V7S RRG
Taiwan Semiconductor Corporation

BZT52B2V7S RRG

bahagian bahagian: 234

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 18µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C62 RHG
Taiwan Semiconductor Corporation

BZT52C62 RHG

bahagian bahagian: 224

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 215 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 43.4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX84C36 RFG
Taiwan Semiconductor Corporation

BZX84C36 RFG

bahagian bahagian: 200

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 25.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C3V3S RRG
Taiwan Semiconductor Corporation

BZT52C3V3S RRG

bahagian bahagian: 238

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 4.5µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX84C5V1 RFG
Taiwan Semiconductor Corporation

BZX84C5V1 RFG

bahagian bahagian: 181

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C16-G RHG
Taiwan Semiconductor Corporation

BZT52C16-G RHG

bahagian bahagian: 197

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B75 RHG
Taiwan Semiconductor Corporation

BZT52B75 RHG

bahagian bahagian: 204

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 255 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 52.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B36-G RHG
Taiwan Semiconductor Corporation

BZT52B36-G RHG

bahagian bahagian: 245

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 25.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C36S RRG
Taiwan Semiconductor Corporation

BZT52C36S RRG

bahagian bahagian: 215

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 25.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B75S RRG
Taiwan Semiconductor Corporation

BZT52B75S RRG

bahagian bahagian: 230

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 255 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 52.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZX84C13 RFG
Taiwan Semiconductor Corporation

BZX84C13 RFG

bahagian bahagian: 167

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52B10S RRG
Taiwan Semiconductor Corporation

BZT52B10S RRG

bahagian bahagian: 254

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 180nA @ 7V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B6V2S RRG
Taiwan Semiconductor Corporation

BZT52B6V2S RRG

bahagian bahagian: 190

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2.7µA @ 4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C43-G RHG
Taiwan Semiconductor Corporation

BZT52C43-G RHG

bahagian bahagian: 222

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 32V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C7V5S RRG
Taiwan Semiconductor Corporation

BZT52C7V5S RRG

bahagian bahagian: 189

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 900nA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C4V7-G RHG
Taiwan Semiconductor Corporation

BZT52C4V7-G RHG

bahagian bahagian: 235

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZX84C20 RFG
Taiwan Semiconductor Corporation

BZX84C20 RFG

bahagian bahagian: 187

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 14V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C4V7S RRG
Taiwan Semiconductor Corporation

BZT52C4V7S RRG

bahagian bahagian: 182

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2.7µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B5V6S RRG
Taiwan Semiconductor Corporation

BZT52B5V6S RRG

bahagian bahagian: 173

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 900nA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B11S RRG
Taiwan Semiconductor Corporation

BZT52B11S RRG

bahagian bahagian: 229

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 90nA @ 8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C68 RHG
Taiwan Semiconductor Corporation

BZT52C68 RHG

bahagian bahagian: 192

Voltan - Zener (Nom) (Vz): 68V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 240 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 47.6V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C30K RKG
Taiwan Semiconductor Corporation

BZT52C30K RKG

bahagian bahagian: 172

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 23V,

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BZX584B6V8 RSG
Taiwan Semiconductor Corporation

BZX584B6V8 RSG

bahagian bahagian: 237

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±2%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 4V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZX84C3V6 RFG
Taiwan Semiconductor Corporation

BZX84C3V6 RFG

bahagian bahagian: 190

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C11-G RHG
Taiwan Semiconductor Corporation

BZT52C11-G RHG

bahagian bahagian: 192

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±5%, Kuasa - Maks: 350mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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BZT52C4V3K RKG
Taiwan Semiconductor Corporation

BZT52C4V3K RKG

bahagian bahagian: 243

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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BZT52C56S RRG
Taiwan Semiconductor Corporation

BZT52C56S RRG

bahagian bahagian: 230

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 200 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 39.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B3V9S RRG
Taiwan Semiconductor Corporation

BZT52B3V9S RRG

bahagian bahagian: 222

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2.7µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C11 RHG
Taiwan Semiconductor Corporation

BZT52C11 RHG

bahagian bahagian: 191

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 90nA @ 8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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