Menu
MelayuMelayu
Rfqs / order.
0Rfqs / order.

Transistor - FET, MOSFET - RF

  • Rumah
  •  
  • Transistor - FET, MOSFET - RF
2SK3079ATE12LQ
Toshiba Semiconductor and Storage

2SK3079ATE12LQ

bahagian bahagian: 25011

Jenis Transistor: N-Channel, Kekerapan: 470MHz, Keuntungan: 13.5dB, Voltan - Ujian: 4.5V, Peringkat Semasa: 3A,

Senarai harapan
2SK3756(TE12L,F)
Toshiba Semiconductor and Storage

2SK3756(TE12L,F)

bahagian bahagian: 38838

Jenis Transistor: N-Channel, Kekerapan: 470MHz, Keuntungan: 12dB, Voltan - Ujian: 4.5V, Peringkat Semasa: 1A,

Senarai harapan
2SK3475TE12LF
Toshiba Semiconductor and Storage

2SK3475TE12LF

bahagian bahagian: 28639

Jenis Transistor: N-Channel, Kekerapan: 520MHz, Keuntungan: 14.9dB, Voltan - Ujian: 7.2V, Peringkat Semasa: 1A,

Senarai harapan
2SK4037(TE12L,Q)
Toshiba Semiconductor and Storage

2SK4037(TE12L,Q)

bahagian bahagian: 22269

Jenis Transistor: N-Channel, Kekerapan: 470MHz, Keuntungan: 11.5dB, Voltan - Ujian: 6V, Peringkat Semasa: 3A,

Senarai harapan
2SK209-BL(TE85L,F)
Toshiba Semiconductor and Storage

2SK209-BL(TE85L,F)

bahagian bahagian: 9945

Jenis Transistor: N-Channel JFET, Kekerapan: 1kHz, Voltan - Ujian: 10V, Gambar Kebisingan: 1dB,

Senarai harapan
2SK209-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SK209-Y(TE85L,F)

bahagian bahagian: 150111

Jenis Transistor: N-Channel JFET, Kekerapan: 1kHz, Voltan - Ujian: 10V, Gambar Kebisingan: 1dB,

Senarai harapan
2SK3476(TE12L,Q)
Toshiba Semiconductor and Storage

2SK3476(TE12L,Q)

bahagian bahagian: 6228

Jenis Transistor: N-Channel, Kekerapan: 520MHz, Keuntungan: 11.4dB, Voltan - Ujian: 7.2V, Peringkat Semasa: 3A,

Senarai harapan
2SK3078A(TE12L,F)
Toshiba Semiconductor and Storage

2SK3078A(TE12L,F)

bahagian bahagian: 6184

Jenis Transistor: N-Channel, Kekerapan: 470MHz, Keuntungan: 8dB, Voltan - Ujian: 4.5V, Peringkat Semasa: 500mA,

Senarai harapan
2SK3074TE12LF
Toshiba Semiconductor and Storage

2SK3074TE12LF

bahagian bahagian: 6224

Jenis Transistor: N-Channel, Kekerapan: 520MHz, Keuntungan: 14.9dB, Voltan - Ujian: 9.6V, Peringkat Semasa: 1A,

Senarai harapan
2SK3075(TE12L,Q)
Toshiba Semiconductor and Storage

2SK3075(TE12L,Q)

bahagian bahagian: 9920

Jenis Transistor: N-Channel, Kekerapan: 520MHz, Keuntungan: 11.7dB, Voltan - Ujian: 9.6V, Peringkat Semasa: 5A,

Senarai harapan
2SK2854(TE12L,F)
Toshiba Semiconductor and Storage

2SK2854(TE12L,F)

bahagian bahagian: 88332

Jenis Transistor: N-Channel, Kekerapan: 849MHz, Peringkat Semasa: 500mA,

Senarai harapan
2SK209-GR(TE85L,F)
Toshiba Semiconductor and Storage

2SK209-GR(TE85L,F)

bahagian bahagian: 181884

Jenis Transistor: N-Channel JFET, Kekerapan: 1kHz, Voltan - Ujian: 10V, Gambar Kebisingan: 1dB,

Senarai harapan
3SK291(TE85L,F)
Toshiba Semiconductor and Storage

3SK291(TE85L,F)

bahagian bahagian: 404

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 800MHz, Keuntungan: 22.5dB, Voltan - Ujian: 6V, Peringkat Semasa: 30mA, Gambar Kebisingan: 2.5dB,

Senarai harapan
3SK293(TE85L,F)
Toshiba Semiconductor and Storage

3SK293(TE85L,F)

bahagian bahagian: 414

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 800MHz, Keuntungan: 22dB, Voltan - Ujian: 6V, Peringkat Semasa: 30mA, Gambar Kebisingan: 2.5dB,

Senarai harapan
3SK292(TE85R,F)
Toshiba Semiconductor and Storage

3SK292(TE85R,F)

bahagian bahagian: 388

Jenis Transistor: N-Channel Dual Gate, Kekerapan: 500MHz, Keuntungan: 26dB, Voltan - Ujian: 6V, Peringkat Semasa: 30mA, Gambar Kebisingan: 1.4dB,

Senarai harapan
3SK294(TE85L,F)
Toshiba Semiconductor and Storage

3SK294(TE85L,F)

bahagian bahagian: 141644

Jenis Transistor: N-Channel, Kekerapan: 500MHz, Keuntungan: 26dB, Voltan - Ujian: 6V, Peringkat Semasa: 30mA, Gambar Kebisingan: 1.4dB,

Senarai harapan
RFM01U7P(TE12L,F)
Toshiba Semiconductor and Storage

RFM01U7P(TE12L,F)

bahagian bahagian: 25081

Jenis Transistor: N-Channel, Kekerapan: 520MHz, Keuntungan: 10.8dB, Voltan - Ujian: 7.2V, Peringkat Semasa: 1A,

Senarai harapan
RFM08U9X(TE12L,Q)
Toshiba Semiconductor and Storage

RFM08U9X(TE12L,Q)

bahagian bahagian: 9190

Jenis Transistor: N-Channel, Kekerapan: 520MHz, Keuntungan: 11.7dB, Voltan - Ujian: 9.6V, Peringkat Semasa: 5A,

Senarai harapan
RFM12U7X(TE12L,Q)
Toshiba Semiconductor and Storage

RFM12U7X(TE12L,Q)

bahagian bahagian: 7176

Jenis Transistor: N-Channel, Kekerapan: 520MHz, Keuntungan: 10.8dB, Voltan - Ujian: 7.2V, Peringkat Semasa: 4A,

Senarai harapan
RFM03U3CT(TE12L)
Toshiba Semiconductor and Storage

RFM03U3CT(TE12L)

bahagian bahagian: 10569

Jenis Transistor: N-Channel, Kekerapan: 520MHz, Keuntungan: 14.8dB, Voltan - Ujian: 3.6V, Peringkat Semasa: 3A,

Senarai harapan
RFM04U6P(TE12L,F)
Toshiba Semiconductor and Storage

RFM04U6P(TE12L,F)

bahagian bahagian: 6008

Jenis Transistor: N-Channel, Kekerapan: 470MHz, Keuntungan: 13.3dB, Voltan - Ujian: 6V, Peringkat Semasa: 2A,

Senarai harapan