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Diod - RF

1SV308,L3F
Toshiba Semiconductor and Storage

1SV308,L3F

bahagian bahagian: 151

Jenis Diod: PIN - Single, Voltan - Terbalik Puncak (Maks): 30V, Semasa - Maks: 50mA, Kapasiti @ Vr, F: 0.5pF @ 1V, 1MHz, Rintangan @ Sekiranya, F: 1.5 Ohm @ 10mA, 100MHz,

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1SV308(TH3,F)
Toshiba Semiconductor and Storage

1SV308(TH3,F)

bahagian bahagian: 6994

Jenis Diod: PIN - Single, Voltan - Terbalik Puncak (Maks): 30V, Semasa - Maks: 50mA, Kapasiti @ Vr, F: 0.5pF @ 1V, 1MHz, Rintangan @ Sekiranya, F: 1.5 Ohm @ 10mA, 100MHz,

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1SV307(TPH3,F)
Toshiba Semiconductor and Storage

1SV307(TPH3,F)

bahagian bahagian: 101204

Jenis Diod: Standard - Single, Voltan - Terbalik Puncak (Maks): 30V, Semasa - Maks: 50mA, Kapasiti @ Vr, F: 0.5pF @ 1V, 1MHz, Rintangan @ Sekiranya, F: 1.5 Ohm @ 10mA, 100MHz,

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1SS315TPH3F
Toshiba Semiconductor and Storage

1SS315TPH3F

bahagian bahagian: 154649

Jenis Diod: Schottky - Single, Voltan - Terbalik Puncak (Maks): 5V, Semasa - Maks: 30mA, Kapasiti @ Vr, F: 0.6pF @ 0.2V, 1MHz,

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1SS381,L3F
Toshiba Semiconductor and Storage

1SS381,L3F

bahagian bahagian: 139396

Jenis Diod: PIN - Single, Voltan - Terbalik Puncak (Maks): 30V, Semasa - Maks: 100mA, Kapasiti @ Vr, F: 1.2pF @ 6V, 1MHz, Rintangan @ Sekiranya, F: 900 mOhm @ 2mA, 100MHz,

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JDP2S02ACT(TPL3)
Toshiba Semiconductor and Storage

JDP2S02ACT(TPL3)

bahagian bahagian: 80

Jenis Diod: PIN - Single, Voltan - Terbalik Puncak (Maks): 30V, Semasa - Maks: 50mA, Kapasiti @ Vr, F: 0.4pF @ 1V, 1MHz, Rintangan @ Sekiranya, F: 1.5 Ohm @ 10mA, 100MHz,

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JDP2S12CR(TE85L,Q
Toshiba Semiconductor and Storage

JDP2S12CR(TE85L,Q

bahagian bahagian: 6892

Jenis Diod: PIN - Single, Voltan - Terbalik Puncak (Maks): 180V, Semasa - Maks: 1A, Kapasiti @ Vr, F: 1.3pF @ 40V, 1MHz, Rintangan @ Sekiranya, F: 700 mOhm @ 10mA, 100MHz,

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JDH2S02FSTPL3
Toshiba Semiconductor and Storage

JDH2S02FSTPL3

bahagian bahagian: 199251

Jenis Diod: Schottky - Single, Voltan - Terbalik Puncak (Maks): 10V, Semasa - Maks: 10mA, Kapasiti @ Vr, F: 0.3pF @ 0.2V, 1MHz,

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JDP4P02AT(TE85L)
Toshiba Semiconductor and Storage

JDP4P02AT(TE85L)

bahagian bahagian: 6881

Jenis Diod: PIN - 2 Independent, Voltan - Terbalik Puncak (Maks): 30V, Semasa - Maks: 50mA, Kapasiti @ Vr, F: 0.4pF @ 1V, 1MHz, Rintangan @ Sekiranya, F: 1.5 Ohm @ 10mA, 100MHz,

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JDH2S01FSTPL3
Toshiba Semiconductor and Storage

JDH2S01FSTPL3

bahagian bahagian: 134503

Jenis Diod: Schottky - Single, Voltan - Terbalik Puncak (Maks): 4V, Semasa - Maks: 25mA, Kapasiti @ Vr, F: 0.6pF @ 0.2V, 1MHz,

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JDV2S10FS(TPL3)
Toshiba Semiconductor and Storage

JDV2S10FS(TPL3)

bahagian bahagian: 128

Jenis Diod: Standard - Single, Voltan - Terbalik Puncak (Maks): 10V, Kapasiti @ Vr, F: 3.4pF @ 2.5V, 1MHz,

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JDV2S09FSTPL3
Toshiba Semiconductor and Storage

JDV2S09FSTPL3

bahagian bahagian: 108

Jenis Diod: Standard - Single, Voltan - Terbalik Puncak (Maks): 10V, Kapasiti @ Vr, F: 11.1pF @ 1V, 1MHz,

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JDV2S41FS(TPL3)
Toshiba Semiconductor and Storage

JDV2S41FS(TPL3)

bahagian bahagian: 21538

Jenis Diod: Standard - Single, Voltan - Terbalik Puncak (Maks): 15V, Kapasiti @ Vr, F: 16pF @ 2V, 1MHz,

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JDV2S07FSTPL3
Toshiba Semiconductor and Storage

JDV2S07FSTPL3

bahagian bahagian: 21519

Jenis Diod: Standard - Single, Voltan - Terbalik Puncak (Maks): 10V, Kapasiti @ Vr, F: 4.9pF @ 1V, 1MHz,

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JDP2S02AFS(TPL3)
Toshiba Semiconductor and Storage

JDP2S02AFS(TPL3)

bahagian bahagian: 198449

Jenis Diod: PIN - Single, Voltan - Terbalik Puncak (Maks): 30V, Semasa - Maks: 50mA, Kapasiti @ Vr, F: 0.4pF @ 1V, 1MHz, Rintangan @ Sekiranya, F: 1.5 Ohm @ 10mA, 100MHz,

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JDP2S08SC(TPL3)
Toshiba Semiconductor and Storage

JDP2S08SC(TPL3)

bahagian bahagian: 159289

Jenis Diod: PIN - Single, Voltan - Terbalik Puncak (Maks): 30V, Semasa - Maks: 50mA, Kapasiti @ Vr, F: 0.4pF @ 1V, 1MHz, Rintangan @ Sekiranya, F: 1.5 Ohm @ 10mA, 100MHz,

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JDH3D01STE85LF
Toshiba Semiconductor and Storage

JDH3D01STE85LF

bahagian bahagian: 6728

Jenis Diod: Schottky, Voltan - Terbalik Puncak (Maks): 4V, Semasa - Maks: 25mA, Kapasiti @ Vr, F: 0.6pF @ 0.2V, 1MHz,

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