Transistor - FET, MOSFET - Susunan

Rumah
Transistor - FET, MOSFET - Susunan

TPCL4202(TE85L,F)

Toshiba Semiconductor and Storage

TPCL4202(TE85L,F)

bahagian bahagian: 2949

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Vgs (th) (Maks) @ Id: 1.2V @ 200µA,

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TPCF8304(TE85L,F,M

Toshiba Semiconductor and Storage

TPCF8304(TE85L,F,M

bahagian bahagian: 2938

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A, Rds On (Maks) @ Id, Vgs: 72 mOhm @ 1.6A, 10V, Vgs (th) (Maks) @ Id: 1.2V @ 1mA,

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SSM6L13TU(T5L,F,T)

Toshiba Semiconductor and Storage

SSM6L13TU(T5L,F,T)

bahagian bahagian: 2912

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 1.8V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 800mA (Ta), Rds On (Maks) @ Id, Vgs: 143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N48FU,RF(D

bahagian bahagian: 2967

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Rds On (Maks) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6N68NU,LF

bahagian bahagian: 16268

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.8V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Rds On (Maks) @ Id, Vgs: 84 mOhm @ 2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N35AFU,LF

bahagian bahagian: 9923

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Ta), Rds On (Maks) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 100µA,

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SSM6N42FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6N42FE(TE85L,F)

bahagian bahagian: 2976

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 800mA, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N815R,LF

bahagian bahagian: 9939

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Rds On (Maks) @ Id, Vgs: 103 mOhm @ 2A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6L35FE,LM

bahagian bahagian: 172252

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA, 100mA, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N67NU,LF

bahagian bahagian: 9963

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.8V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Ta), Rds On (Maks) @ Id, Vgs: 39.1 mOhm @ 2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N35AFE,LF

bahagian bahagian: 13256

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.2V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Ta), Rds On (Maks) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6P35FE,LM

bahagian bahagian: 173905

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 50mA, 4V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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SSM6P15FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6P15FE(TE85L,F)

bahagian bahagian: 13232

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.7V @ 100µA,

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SSM6N37CTD(TPL3)

Toshiba Semiconductor and Storage

SSM6N37CTD(TPL3)

bahagian bahagian: 2957

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA, Rds On (Maks) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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SSM6P41FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6P41FE(TE85L,F)

bahagian bahagian: 13283

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 720mA, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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TPC8405(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8405(TE12L,Q,M)

bahagian bahagian: 3098

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 4.5A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 2V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N357R,LF

bahagian bahagian: 16211

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 650mA (Ta), Rds On (Maks) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V, Vgs (th) (Maks) @ Id: 2V @ 1mA,

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SSM6P35FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6P35FE(TE85L,F)

bahagian bahagian: 121978

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 50mA, 4V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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SSM6L35FU(TE85L,F)

Toshiba Semiconductor and Storage

SSM6L35FU(TE85L,F)

bahagian bahagian: 156233

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 1.2V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA, 100mA, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6L61NU,LF

bahagian bahagian: 154751

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A,

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Toshiba Semiconductor and Storage

SSM6N48FU,RF

bahagian bahagian: 3013

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

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SSM6N7002BFU,LF

Toshiba Semiconductor and Storage

SSM6N7002BFU,LF

bahagian bahagian: 154781

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 3.1V @ 250µA,

Senarai harapan

Toshiba Semiconductor and Storage

SSM6N61NU,LF

bahagian bahagian: 117701

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6P49NU,LF

bahagian bahagian: 154268

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 1.2V @ 1mA,

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SSM6N16FUTE85LF

Toshiba Semiconductor and Storage

SSM6N16FUTE85LF

bahagian bahagian: 9999

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.1V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6L36FE,LM

bahagian bahagian: 107404

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, 330mA, Rds On (Maks) @ Id, Vgs: 630 mOhm @ 200mA, 5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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TPCP8203(TE85L,F)

Toshiba Semiconductor and Storage

TPCP8203(TE85L,F)

bahagian bahagian: 2780

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.7A, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

Senarai harapan

SSM6N7002BFE(T5L,F

Toshiba Semiconductor and Storage

SSM6N7002BFE(T5L,F

bahagian bahagian: 2844

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 3.1V @ 250µA,

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TPC8211(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8211(TE12L,Q,M)

bahagian bahagian: 2801

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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TPC8213-H(TE12LQ,M

Toshiba Semiconductor and Storage

TPC8213-H(TE12LQ,M

bahagian bahagian: 2813

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 1mA,

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TPC8208(TE12L,Q)

Toshiba Semiconductor and Storage

TPC8208(TE12L,Q)

bahagian bahagian: 2694

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.5A, 4V, Vgs (th) (Maks) @ Id: 1.2V @ 200µA,

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TPCF8201(TE85L,F,M

Toshiba Semiconductor and Storage

TPCF8201(TE85L,F,M

bahagian bahagian: 2756

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 200µA,

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TPC8212-H(TE12LQ,M

Toshiba Semiconductor and Storage

TPC8212-H(TE12LQ,M

bahagian bahagian: 2781

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 1mA,

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TPCP8401(TE85L,F)

Toshiba Semiconductor and Storage

TPCP8401(TE85L,F)

bahagian bahagian: 3345

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, 5.5A, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.1V @ 100µA,

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TPC8208(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8208(TE12L,Q,M)

bahagian bahagian: 2829

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.5A, 4V, Vgs (th) (Maks) @ Id: 1.2V @ 200µA,

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Toshiba Semiconductor and Storage

TPC8207(TE12L)

bahagian bahagian: 2650

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 4.8A, 4V, Vgs (th) (Maks) @ Id: 1.2V @ 200µA,

Senarai harapan

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