Diod - Kapasitansi Berubah (Varicaps, Varactors) | Produk Semikonduktor Diskrit | 1

1SV324TPH3F

bahagian bahagian: 185359

Kapasiti @ Vr, F: 12pF @ 4V, 1MHz, Nisbah Kapasiti: 4.3, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

Senarai harapan

Toshiba Semiconductor and Storage

1SV277TPH3F

bahagian bahagian: 196616

Kapasiti @ Vr, F: 2.35pF @ 4V, 1MHz, Nisbah Kapasiti: 2.3, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

Senarai harapan

Toshiba Semiconductor and Storage

1SV229TPH3F

bahagian bahagian: 137721

Kapasiti @ Vr, F: 6.5pF @ 10V, 1MHz, Nisbah Kapasiti: 2.5, Keadaan Nisbah Kapasitansi: C2/C10, Voltan - Terbalik Puncak (Maks): 15V, Jenis Diod: Single,

Senarai harapan

Toshiba Semiconductor and Storage

1SV304TPH3F

bahagian bahagian: 112795

Kapasiti @ Vr, F: 6.6pF @ 4V, 1MHz, Nisbah Kapasiti: 3, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

Senarai harapan

Toshiba Semiconductor and Storage

1SV310TPH3F

bahagian bahagian: 155615

Kapasiti @ Vr, F: 5.45pF @ 4V, 1MHz, Nisbah Kapasiti: 2.1, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

Senarai harapan

Toshiba Semiconductor and Storage

1SV279,H3F

bahagian bahagian: 171

Kapasiti @ Vr, F: 6.5pF @ 10V, 1MHz, Nisbah Kapasiti: 2.5, Keadaan Nisbah Kapasitansi: C2/C10, Voltan - Terbalik Puncak (Maks): 15V, Jenis Diod: Single,

Senarai harapan

Toshiba Semiconductor and Storage

1SV270TPH3F

bahagian bahagian: 199585

Kapasiti @ Vr, F: 8.7pF @ 4V, 1MHz, Nisbah Kapasiti: 2, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

Senarai harapan

Toshiba Semiconductor and Storage

1SV325,H3F

bahagian bahagian: 113697

Kapasiti @ Vr, F: 12pF @ 4V, 1MHz, Nisbah Kapasiti: 4.3, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

Senarai harapan

Toshiba Semiconductor and Storage

1SV228TPH3F

bahagian bahagian: 173745

Kapasiti @ Vr, F: 13.7pF @ 8V, 1MHz, Nisbah Kapasiti: 2.6, Keadaan Nisbah Kapasitansi: C3/C8, Voltan - Terbalik Puncak (Maks): 15V, Jenis Diod: 1 Pair Common Cathode,

Senarai harapan

Toshiba Semiconductor and Storage

1SV322(TPH3,F)

bahagian bahagian: 134786

Kapasiti @ Vr, F: 7.1pF @ 4V, 1MHz, Nisbah Kapasiti: 4.3, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

Senarai harapan

Toshiba Semiconductor and Storage

1SV239TPH3F

bahagian bahagian: 138496

Kapasiti @ Vr, F: 2pF @ 10V, 1MHz, Nisbah Kapasiti: 2.4, Keadaan Nisbah Kapasitansi: C2/C10, Voltan - Terbalik Puncak (Maks): 15V, Jenis Diod: Single,

Senarai harapan

Toshiba Semiconductor and Storage

1SV323,H3F

bahagian bahagian: 196969

Kapasiti @ Vr, F: 7.1pF @ 4V, 1MHz, Nisbah Kapasiti: 4.3, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

Senarai harapan

Toshiba Semiconductor and Storage

1SV281(TPH3,F)

bahagian bahagian: 113541

Kapasiti @ Vr, F: 8.7pF @ 4V, 1MHz, Nisbah Kapasiti: 2, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

Senarai harapan

Toshiba Semiconductor and Storage

1SV280,H3F

bahagian bahagian: 138179

Kapasiti @ Vr, F: 2pF @ 10V, 1MHz, Nisbah Kapasiti: 2.4, Keadaan Nisbah Kapasitansi: C2/C10, Voltan - Terbalik Puncak (Maks): 15V, Jenis Diod: Single,

Senarai harapan

Toshiba Semiconductor and Storage

1SV311(TPH3,F)

bahagian bahagian: 4833

Kapasiti @ Vr, F: 5.45pF @ 4V, 1MHz, Nisbah Kapasiti: 2.1, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

Senarai harapan

Toshiba Semiconductor and Storage

1SV282TPH3F

bahagian bahagian: 128246

Kapasiti @ Vr, F: 3pF @ 25V, 1MHz, Nisbah Kapasiti: 12.5, Keadaan Nisbah Kapasitansi: C2/C25, Voltan - Terbalik Puncak (Maks): 34V, Jenis Diod: Single,

Senarai harapan

Toshiba Semiconductor and Storage

1SV285TPH3F

bahagian bahagian: 158213

Kapasiti @ Vr, F: 2.35pF @ 4V, 1MHz, Nisbah Kapasiti: 2.3, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

Senarai harapan

Toshiba Semiconductor and Storage

1SV305,H3F

bahagian bahagian: 188801

Kapasiti @ Vr, F: 6.6pF @ 4V, 1MHz, Nisbah Kapasiti: 3, Keadaan Nisbah Kapasitansi: C1/C4, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

Senarai harapan

Toshiba Semiconductor and Storage

1SV314(TPL3,F)

bahagian bahagian: 7384

Kapasiti @ Vr, F: 3.4pF @ 2.5V, 1MHz, Nisbah Kapasiti: 2.5, Keadaan Nisbah Kapasitansi: C0.5/C2.5, Voltan - Terbalik Puncak (Maks): 10V, Jenis Diod: Single,

Senarai harapan