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Transistor - Bipolar (BJT) - Susunan

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  • Transistor - Bipolar (BJT) - Susunan
2SC4207-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SC4207-Y(TE85L,F)

bahagian bahagian: 152609

Jenis Transistor: 2 NPN (Dual) Matched Pair, Common Emitter, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

Senarai harapan
2SC4944-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SC4944-Y(TE85L,F)

bahagian bahagian: 98

Jenis Transistor: 2 NPN (Dual) Matched Pair, Common Emitter, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

Senarai harapan
2SA1618-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SA1618-Y(TE85L,F)

bahagian bahagian: 124

Jenis Transistor: 2 PNP (Dual) Matched Pair, Common Emitter, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

Senarai harapan
2SA1873-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SA1873-Y(TE85L,F)

bahagian bahagian: 114931

Jenis Transistor: 2 PNP (Dual) Matched Pair, Common Emitter, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

Senarai harapan
2SA1873-GR(TE85L,F
Toshiba Semiconductor and Storage

2SA1873-GR(TE85L,F

bahagian bahagian: 137653

Jenis Transistor: 2 PNP (Dual) Matched Pair, Common Emitter, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Senarai harapan
2SC4207-BL(TE85L,F
Toshiba Semiconductor and Storage

2SC4207-BL(TE85L,F

bahagian bahagian: 153875

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V,

Senarai harapan
2SC4207-GR(TE85L,F
Toshiba Semiconductor and Storage

2SC4207-GR(TE85L,F

bahagian bahagian: 9987

Jenis Transistor: 2 NPN (Dual) Common Emitter, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Senarai harapan
2SA1618-GR(TE85L,F
Toshiba Semiconductor and Storage

2SA1618-GR(TE85L,F

bahagian bahagian: 115889

Jenis Transistor: 2 PNP (Dual) Matched Pair, Common Emitter, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Senarai harapan
HN1B01FU-Y(L,F,T)
Toshiba Semiconductor and Storage

HN1B01FU-Y(L,F,T)

bahagian bahagian: 4365

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

Senarai harapan
HN1A01FE-GR,LF
Toshiba Semiconductor and Storage

HN1A01FE-GR,LF

bahagian bahagian: 167758

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Senarai harapan
HN1C03FU-A(TE85L,F
Toshiba Semiconductor and Storage

HN1C03FU-A(TE85L,F

bahagian bahagian: 115887

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 300mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 100mV @ 3mA, 30mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V,

Senarai harapan
HN4A51JTE85LF
Toshiba Semiconductor and Storage

HN4A51JTE85LF

bahagian bahagian: 179411

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Senarai harapan
HN1A01F-GR(TE85L,F
Toshiba Semiconductor and Storage

HN1A01F-GR(TE85L,F

bahagian bahagian: 4432

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Senarai harapan
ULN2004AFWG,N,E
Toshiba Semiconductor and Storage

ULN2004AFWG,N,E

bahagian bahagian: 124168

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Senarai harapan
HN1A01F-Y(TE85L,F)
Toshiba Semiconductor and Storage

HN1A01F-Y(TE85L,F)

bahagian bahagian: 104094

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

Senarai harapan
HN4B04J(TE85L,F)
Toshiba Semiconductor and Storage

HN4B04J(TE85L,F)

bahagian bahagian: 147055

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V,

Senarai harapan
HN1A01FU-Y,LF
Toshiba Semiconductor and Storage

HN1A01FU-Y,LF

bahagian bahagian: 104803

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

Senarai harapan
TPCP8901(TE85L,F,M
Toshiba Semiconductor and Storage

TPCP8901(TE85L,F,M

bahagian bahagian: 104

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 1A, 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 170mV @ 6mA, 300mA / 200mV @ 10mA, 300mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V,

Senarai harapan
HN1B04FU-GR,LF
Toshiba Semiconductor and Storage

HN1B04FU-GR,LF

bahagian bahagian: 184759

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Senarai harapan
HN1B01F-GR(TE85L,F
Toshiba Semiconductor and Storage

HN1B01F-GR(TE85L,F

bahagian bahagian: 4437

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Senarai harapan
HN4A06J(TE85L,F)
Toshiba Semiconductor and Storage

HN4A06J(TE85L,F)

bahagian bahagian: 4500

Jenis Transistor: 2 PNP (Dual) Matched Pair, Common Emitter, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Senarai harapan
HN2C01FE-GR(T5L,F)
Toshiba Semiconductor and Storage

HN2C01FE-GR(T5L,F)

bahagian bahagian: 4488

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Senarai harapan
HN1C01FU-GR,LF
Toshiba Semiconductor and Storage

HN1C01FU-GR,LF

bahagian bahagian: 184335

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Senarai harapan
HN3A51F(TE85L,F)
Toshiba Semiconductor and Storage

HN3A51F(TE85L,F)

bahagian bahagian: 4476

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Senarai harapan
ULN2003APG,CN
Toshiba Semiconductor and Storage

ULN2003APG,CN

bahagian bahagian: 4401

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Senarai harapan
HN1C01FU-Y(T5L,F,T
Toshiba Semiconductor and Storage

HN1C01FU-Y(T5L,F,T

bahagian bahagian: 6508

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

Senarai harapan
HN1B01FU-GR,LF
Toshiba Semiconductor and Storage

HN1B01FU-GR,LF

bahagian bahagian: 151500

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Senarai harapan
ULN2803AFWG,C,EL
Toshiba Semiconductor and Storage

ULN2803AFWG,C,EL

bahagian bahagian: 4471

Jenis Transistor: 8 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Senarai harapan
HN1C03F-B(TE85L,F)
Toshiba Semiconductor and Storage

HN1C03F-B(TE85L,F)

bahagian bahagian: 9945

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 300mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 100mV @ 3mA, 30mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V,

Senarai harapan
HN1C01FYTE85LF
Toshiba Semiconductor and Storage

HN1C01FYTE85LF

bahagian bahagian: 111105

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

Senarai harapan
HN1B04F(TE85L,F)
Toshiba Semiconductor and Storage

HN1B04F(TE85L,F)

bahagian bahagian: 4492

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V,

Senarai harapan
ULN2003AFWG,O,N,E
Toshiba Semiconductor and Storage

ULN2003AFWG,O,N,E

bahagian bahagian: 4430

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Senarai harapan
HN4B01JE(TE85L,F)
Toshiba Semiconductor and Storage

HN4B01JE(TE85L,F)

bahagian bahagian: 76

Jenis Transistor: NPN, PNP (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 10MA, 100MA,

Senarai harapan
ULN2803APG,CN
Toshiba Semiconductor and Storage

ULN2803APG,CN

bahagian bahagian: 4464

Jenis Transistor: 8 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Senarai harapan
HN3C51F-BL(TE85L,F
Toshiba Semiconductor and Storage

HN3C51F-BL(TE85L,F

bahagian bahagian: 4503

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V,

Senarai harapan
HN1B04FU-Y,LF
Toshiba Semiconductor and Storage

HN1B04FU-Y,LF

bahagian bahagian: 9904

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

Senarai harapan