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Transistor - FET, MOSFET - Susunan

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  • Transistor - FET, MOSFET - Susunan
SQJ262EP-T1_GE3
Vishay Siliconix

SQJ262EP-T1_GE3

bahagian bahagian: 2536

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc), 40A (Tc), Rds On (Maks) @ Id, Vgs: 35.5 mOhm @ 2A, 10V, 15.5 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SQS944ENW-T1_GE3
Vishay Siliconix

SQS944ENW-T1_GE3

bahagian bahagian: 2484

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 1.25A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI4202DY-T1-GE3
Vishay Siliconix

SI4202DY-T1-GE3

bahagian bahagian: 118970

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12.1A, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI1029X-T1-GE3
Vishay Siliconix

SI1029X-T1-GE3

bahagian bahagian: 164736

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 305mA, 190mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SIA533EDJ-T1-GE3
Vishay Siliconix

SIA533EDJ-T1-GE3

bahagian bahagian: 106980

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SIA975DJ-T1-GE3
Vishay Siliconix

SIA975DJ-T1-GE3

bahagian bahagian: 159548

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 41 mOhm @ 4.3A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SQJ260EP-T1_GE3
Vishay Siliconix

SQJ260EP-T1_GE3

bahagian bahagian: 2593

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), 54A (Tc), Rds On (Maks) @ Id, Vgs: 19 mOhm @ 6A, 10V, 8.5 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI1026X-T1-GE3
Vishay Siliconix

SI1026X-T1-GE3

bahagian bahagian: 107231

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 305mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI5515CDC-T1-GE3
Vishay Siliconix

SI5515CDC-T1-GE3

bahagian bahagian: 185766

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 800mV @ 250µA,

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SI1539CDL-T1-GE3
Vishay Siliconix

SI1539CDL-T1-GE3

bahagian bahagian: 143752

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 700mA, 500mA, Rds On (Maks) @ Id, Vgs: 388 mOhm @ 600mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SIA517DJ-T1-GE3
Vishay Siliconix

SIA517DJ-T1-GE3

bahagian bahagian: 150755

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SIR770DP-T1-GE3
Vishay Siliconix

SIR770DP-T1-GE3

bahagian bahagian: 139904

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

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SI1553CDL-T1-GE3
Vishay Siliconix

SI1553CDL-T1-GE3

bahagian bahagian: 145828

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 700mA, 500mA, Rds On (Maks) @ Id, Vgs: 390 mOhm @ 700mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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SQJB70EP-T1_GE3
Vishay Siliconix

SQJB70EP-T1_GE3

bahagian bahagian: 113439

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.3A (Tc), Rds On (Maks) @ Id, Vgs: 95 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

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SI4936BDY-T1-E3
Vishay Siliconix

SI4936BDY-T1-E3

bahagian bahagian: 168524

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.9A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 5.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI1965DH-T1-E3
Vishay Siliconix

SI1965DH-T1-E3

bahagian bahagian: 100544

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, Rds On (Maks) @ Id, Vgs: 390 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SIA911ADJ-T1-GE3
Vishay Siliconix

SIA911ADJ-T1-GE3

bahagian bahagian: 139873

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 116 mOhm @ 2.8A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SQJ990EP-T1_GE3
Vishay Siliconix

SQJ990EP-T1_GE3

bahagian bahagian: 141592

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A (Tc), Rds On (Maks) @ Id, Vgs: 40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SQ1563AEH-T1_GE3
Vishay Siliconix

SQ1563AEH-T1_GE3

bahagian bahagian: 2535

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 850mA (Tc), Rds On (Maks) @ Id, Vgs: 280 mOhm @ 850mA, 4.5V, 575 mOhm @ 800mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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SIA537EDJ-T1-GE3
Vishay Siliconix

SIA537EDJ-T1-GE3

bahagian bahagian: 157576

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SI5513CDC-T1-GE3
Vishay Siliconix

SI5513CDC-T1-GE3

bahagian bahagian: 193923

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, 3.7A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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SQJQ904E-T1_GE3
Vishay Siliconix

SQJQ904E-T1_GE3

bahagian bahagian: 54848

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Rds On (Maks) @ Id, Vgs: 3.4 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

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SI1926DL-T1-E3
Vishay Siliconix

SI1926DL-T1-E3

bahagian bahagian: 150474

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 370mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 340mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI7212DN-T1-E3
Vishay Siliconix

SI7212DN-T1-E3

bahagian bahagian: 57376

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 6.8A, 10V, Vgs (th) (Maks) @ Id: 1.6V @ 250µA,

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SQJB40EP-T1_GE3
Vishay Siliconix

SQJB40EP-T1_GE3

bahagian bahagian: 152466

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 8 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SQJ963EP-T1_GE3
Vishay Siliconix

SQJ963EP-T1_GE3

bahagian bahagian: 91401

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Rds On (Maks) @ Id, Vgs: 85 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI7972DP-T1-GE3
Vishay Siliconix

SI7972DP-T1-GE3

bahagian bahagian: 149146

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Rds On (Maks) @ Id, Vgs: 18 mOhm @ 11A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

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SQJQ910EL-T1_GE3
Vishay Siliconix

SQJQ910EL-T1_GE3

bahagian bahagian: 2597

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A (Tc), Rds On (Maks) @ Id, Vgs: 8.6 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI7949DP-T1-E3
Vishay Siliconix

SI7949DP-T1-E3

bahagian bahagian: 39374

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A, Rds On (Maks) @ Id, Vgs: 64 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SQJB00EP-T1_GE3
Vishay Siliconix

SQJB00EP-T1_GE3

bahagian bahagian: 152443

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 13 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

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SI4900DY-T1-E3
Vishay Siliconix

SI4900DY-T1-E3

bahagian bahagian: 142035

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SQJQ980EL-T1_GE3
Vishay Siliconix

SQJQ980EL-T1_GE3

bahagian bahagian: 2601

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Tc), Rds On (Maks) @ Id, Vgs: 13.5 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SIZF906ADT-T1-GE3
Vishay Siliconix

SIZF906ADT-T1-GE3

bahagian bahagian: 2533

Jenis FET: 2 N-Channel (Dual), Schottky, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc), Rds On (Maks) @ Id, Vgs: 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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SI4214DDY-T1-E3
Vishay Siliconix

SI4214DDY-T1-E3

bahagian bahagian: 188973

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.5A, Rds On (Maks) @ Id, Vgs: 19.5 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SQJB80EP-T1_GE3
Vishay Siliconix

SQJB80EP-T1_GE3

bahagian bahagian: 152485

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI4925BDY-T1-E3
Vishay Siliconix

SI4925BDY-T1-E3

bahagian bahagian: 152470

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 7.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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