Transistor - FET, MOSFET - Susunan

Rumah
Transistor - FET, MOSFET - Susunan

SIA920DJ-T1-GE3

Vishay Siliconix

SIA920DJ-T1-GE3

bahagian bahagian: 118547

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 5.3A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

Senarai harapan

Vishay Siliconix

SI3588DV-T1-E3

bahagian bahagian: 2762

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, 570mA, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

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SI4388DY-T1-GE3

Vishay Siliconix

SI4388DY-T1-GE3

bahagian bahagian: 2870

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.7A, 11.3A, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI5933DC-T1-GE3

Vishay Siliconix

SI5933DC-T1-GE3

bahagian bahagian: 2867

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI4563DY-T1-E3

bahagian bahagian: 2704

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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SI6969BDQ-T1-E3

Vishay Siliconix

SI6969BDQ-T1-E3

bahagian bahagian: 2784

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4.6A, 4.5V, Vgs (th) (Maks) @ Id: 800mV @ 250µA,

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Vishay Siliconix

VQ1006P-E3

bahagian bahagian: 2906

Jenis FET: 4 N-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 90V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA, Rds On (Maks) @ Id, Vgs: 4.5 Ohm @ 1A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Vishay Siliconix

SI4942DY-T1-E3

bahagian bahagian: 2870

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 7.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI4940DY-T1-GE3

Vishay Siliconix

SI4940DY-T1-GE3

bahagian bahagian: 2808

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.2A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 5.7A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI4816DY-T1-E3

bahagian bahagian: 2905

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, 7.7A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 6.3A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Vishay Siliconix

SI5509DC-T1-E3

bahagian bahagian: 2749

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.1A, 4.8A, Rds On (Maks) @ Id, Vgs: 52 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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SI4914BDY-T1-GE3

Vishay Siliconix

SI4914BDY-T1-GE3

bahagian bahagian: 118908

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.4A, 8A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

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Vishay Siliconix

SI4967DY-T1-E3

bahagian bahagian: 2883

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

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Vishay Siliconix

SI4940DY-T1-E3

bahagian bahagian: 2875

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.2A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 5.7A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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SI3529DV-T1-GE3

Vishay Siliconix

SI3529DV-T1-GE3

bahagian bahagian: 2831

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, 1.95A, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI6924AEDQ-T1-E3

Vishay Siliconix

SI6924AEDQ-T1-E3

bahagian bahagian: 2801

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 28V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 4.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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SI7901EDN-T1-GE3

Vishay Siliconix

SI7901EDN-T1-GE3

bahagian bahagian: 2866

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 800µA,

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SI7234DP-T1-GE3

Vishay Siliconix

SI7234DP-T1-GE3

bahagian bahagian: 47223

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A, Rds On (Maks) @ Id, Vgs: 3.4 mOhm @ 20A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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SI7980DP-T1-GE3

Vishay Siliconix

SI7980DP-T1-GE3

bahagian bahagian: 96693

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI1026X-T1-E3

bahagian bahagian: 2694

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 305mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI1551DL-T1-GE3

Vishay Siliconix

SI1551DL-T1-GE3

bahagian bahagian: 2873

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 290mA, 410mA, Rds On (Maks) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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SI7872DP-T1-GE3

Vishay Siliconix

SI7872DP-T1-GE3

bahagian bahagian: 71532

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

Senarai harapan

Vishay Siliconix

SI7980DP-T1-E3

bahagian bahagian: 2862

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI4539ADY-T1-E3

Vishay Siliconix

SI4539ADY-T1-E3

bahagian bahagian: 2626

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A, 3.7A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI4923DY-T1-E3

bahagian bahagian: 2886

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

Senarai harapan

Vishay Siliconix

SI4910DY-T1-E3

bahagian bahagian: 2756

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.6A, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

Senarai harapan

Vishay Siliconix

SI3993DV-T1-E3

bahagian bahagian: 198401

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.8A, Rds On (Maks) @ Id, Vgs: 133 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI4972DY-T1-GE3

Vishay Siliconix

SI4972DY-T1-GE3

bahagian bahagian: 2881

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.8A, 7.2A, Rds On (Maks) @ Id, Vgs: 14.5 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

VQ1001P-E3

bahagian bahagian: 2920

Jenis FET: 4 N-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 830mA, Rds On (Maks) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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SI7958DP-T1-GE3

Vishay Siliconix

SI7958DP-T1-GE3

bahagian bahagian: 2819

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.2A, Rds On (Maks) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI6933DQ-T1-GE3

Vishay Siliconix

SI6933DQ-T1-GE3

bahagian bahagian: 2892

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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SI4973DY-T1-GE3

Vishay Siliconix

SI4973DY-T1-GE3

bahagian bahagian: 2865

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 7.6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI7983DP-T1-GE3

Vishay Siliconix

SI7983DP-T1-GE3

bahagian bahagian: 2899

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.7A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 12A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 600µA,

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SI1563EDH-T1-E3

Vishay Siliconix

SI1563EDH-T1-E3

bahagian bahagian: 2699

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.13A, 880mA, Rds On (Maks) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 100µA,

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Vishay Siliconix

SI1539DL-T1-E3

bahagian bahagian: 2765

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 540mA, 420mA, Rds On (Maks) @ Id, Vgs: 480 mOhm @ 590mA, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 250µA,

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SI7844DP-T1-GE3

Vishay Siliconix

SI7844DP-T1-GE3

bahagian bahagian: 2794

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

Senarai harapan

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