Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 18

SI4567DY-T1-E3

bahagian bahagian: 2783

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, 4.4A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4.1A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SI5906DU-T1-GE3

bahagian bahagian: 2915

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 4.8A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SI4500BDY-T1-E3

bahagian bahagian: 2701

Jenis FET: N and P-Channel, Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.6A, 3.8A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI3909DV-T1-E3

bahagian bahagian: 2856

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Rds On (Maks) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V, Vgs (th) (Maks) @ Id: 500mV @ 250µA (Min),

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Vishay Siliconix

SI4830CDY-T1-GE3

bahagian bahagian: 135529

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 1mA,

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Vishay Siliconix

SI9933BDY-T1-E3

bahagian bahagian: 2801

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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Vishay Siliconix

SI1553DL-T1-E3

bahagian bahagian: 2696

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 660mA, 410mA, Rds On (Maks) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs (th) (Maks) @ Id: 600mV @ 250µA (Min),

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Vishay Siliconix

SI9945AEY-T1

bahagian bahagian: 2814

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 3.7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI1539DL-T1-GE3

bahagian bahagian: 2837

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 540mA, 420mA, Rds On (Maks) @ Id, Vgs: 480 mOhm @ 590mA, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 250µA,

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Vishay Siliconix

SI4330DY-T1-GE3

bahagian bahagian: 2810

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.6A, Rds On (Maks) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI3905DV-T1-E3

bahagian bahagian: 2795

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

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Vishay Siliconix

SI7501DN-T1-GE3

bahagian bahagian: 57296

Jenis FET: N and P-Channel, Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A, 4.5A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 7.7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI5975DC-T1-GE3

bahagian bahagian: 2853

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, Rds On (Maks) @ Id, Vgs: 86 mOhm @ 3.1A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 1mA (Min),

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Vishay Siliconix

SI6943BDQ-T1-GE3

bahagian bahagian: 2834

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 800mV @ 250µA,

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Vishay Siliconix

SI6963BDQ-T1-GE3

bahagian bahagian: 2791

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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Vishay Siliconix

SI5975DC-T1-E3

bahagian bahagian: 2864

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, Rds On (Maks) @ Id, Vgs: 86 mOhm @ 3.1A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 1mA (Min),

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Vishay Siliconix

SI6973DQ-T1-E3

bahagian bahagian: 2882

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4.8A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

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Vishay Siliconix

SI1988DH-T1-GE3

bahagian bahagian: 2796

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, Rds On (Maks) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SIZ900DT-T1-GE3

bahagian bahagian: 87000

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24A, 28A, Rds On (Maks) @ Id, Vgs: 7.2 mOhm @ 19.4A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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Vishay Siliconix

SI7958DP-T1-E3

bahagian bahagian: 3297

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.2A, Rds On (Maks) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4816DY-T1-GE3

bahagian bahagian: 2804

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, 7.7A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 6.3A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Vishay Siliconix

SI1912EDH-T1-E3

bahagian bahagian: 2739

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.13A, Rds On (Maks) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 100µA (Min),

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Vishay Siliconix

SI1563DH-T1-E3

bahagian bahagian: 3284

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.13A, 880mA, Rds On (Maks) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 100µA,

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Vishay Siliconix

SI4834CDY-T1-GE3

bahagian bahagian: 135475

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 1mA,

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Vishay Siliconix

SI6943BDQ-T1-E3

bahagian bahagian: 2779

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 800mV @ 250µA,

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Vishay Siliconix

SI7960DP-T1-GE3

bahagian bahagian: 2812

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 9.7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI7222DN-T1-E3

bahagian bahagian: 2764

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 42 mOhm @ 5.7A, 10V, Vgs (th) (Maks) @ Id: 1.6V @ 250µA,

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Vishay Siliconix

SI1553DL-T1

bahagian bahagian: 2791

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 660mA, 410mA, Rds On (Maks) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs (th) (Maks) @ Id: 600mV @ 250µA (Min),

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Vishay Siliconix

SI6955ADQ-T1-E3

bahagian bahagian: 2891

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 2.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI4834CDY-T1-E3

bahagian bahagian: 135916

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 1mA,

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Vishay Siliconix

SI4230DY-T1-GE3

bahagian bahagian: 2831

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 20.5 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI7216DN-T1-E3

bahagian bahagian: 113570

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI1034X-T1-E3

bahagian bahagian: 2786

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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Vishay Siliconix

SI3850ADV-T1-E3

bahagian bahagian: 2773

Jenis FET: N and P-Channel, Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A, 960mA, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI7222DN-T1-GE3

bahagian bahagian: 2787

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 42 mOhm @ 5.7A, 10V, Vgs (th) (Maks) @ Id: 1.6V @ 250µA,

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Vishay Siliconix

SI6966EDQ-T1-E3

bahagian bahagian: 2830

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V, Vgs (th) (Maks) @ Id: 600mV @ 250µA (Min),

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