Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 18

SI4804CDY-T1-GE3

bahagian bahagian: 85201

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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Vishay Siliconix

SI5515DC-T1-GE3

bahagian bahagian: 153475

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A, 3A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SQ1902AEL-T1_GE3

bahagian bahagian: 9906

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 780mA (Tc), Rds On (Maks) @ Id, Vgs: 415 mOhm @ 660mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI4204DY-T1-GE3

bahagian bahagian: 80891

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 19.8A, Rds On (Maks) @ Id, Vgs: 4.6 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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Vishay Siliconix

SI1034X-T1-GE3

bahagian bahagian: 127515

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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Vishay Siliconix

SI3981DV-T1-E3

bahagian bahagian: 3003

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.6A, Rds On (Maks) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

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Vishay Siliconix

SQJ910AEP-T1_GE3

bahagian bahagian: 9943

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 7 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI7501DN-T1-E3

bahagian bahagian: 3365

Jenis FET: N and P-Channel, Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A, 4.5A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 7.7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SIZ980DT-T1-GE3

bahagian bahagian: 16202

Jenis FET: 2 N-Channel (Dual), Schottky, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), 60A (Tc), Rds On (Maks) @ Id, Vgs: 6.7 mOhm @ 15A, 10V, 1.6 mOhm @ 19A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SI4909DY-T1-GE3

bahagian bahagian: 158525

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI4925BDY-T1-GE3

bahagian bahagian: 89747

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 7.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI8902EDB-T2-E1

bahagian bahagian: 86559

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.9A, Vgs (th) (Maks) @ Id: 1V @ 980µA,

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Vishay Siliconix

SI3590DV-T1-GE3

bahagian bahagian: 199636

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, 1.7A, Rds On (Maks) @ Id, Vgs: 77 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI7998DP-T1-GE3

bahagian bahagian: 103462

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A, 30A, Rds On (Maks) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SIA915DJ-T4-GE3

bahagian bahagian: 2966

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A (Ta), 4.5A (Tc), Rds On (Maks) @ Id, Vgs: 87 mOhm @ 2.9A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SIZ322DT-T1-GE3

bahagian bahagian: 266

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 6.35 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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Vishay Siliconix

SI5944DU-T1-GE3

bahagian bahagian: 2992

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 112 mOhm @ 3.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI7997DP-T1-GE3

bahagian bahagian: 69522

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SI4818DY-T1-E3

bahagian bahagian: 2959

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, 7A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 6.3A, 10V, Vgs (th) (Maks) @ Id: 800mV @ 250µA (Min),

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Vishay Siliconix

SQ4937EY-T1_GE3

bahagian bahagian: 10827

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Tc), Rds On (Maks) @ Id, Vgs: 75 mOhm @ 3.9A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI4931DY-T1-E3

bahagian bahagian: 180805

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.7A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 350µA,

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Vishay Siliconix

SI7964DP-T1-E3

bahagian bahagian: 3339

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.1A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 9.6A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 250µA,

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Vishay Siliconix

SI7220DN-T1-GE3

bahagian bahagian: 86597

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI7905DN-T1-GE3

bahagian bahagian: 73616

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SQJ912AEP-T1_GE3

bahagian bahagian: 141553

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A, Rds On (Maks) @ Id, Vgs: 9.3 mOhm @ 9.7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI3585CDV-T1-GE3

bahagian bahagian: 112724

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.9A, 2.1A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI4830CDY-T1-E3

bahagian bahagian: 135865

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 1mA,

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Vishay Siliconix

SI5935DC-T1-E3

bahagian bahagian: 3338

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 86 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI6969BDQ-T1-GE3

bahagian bahagian: 2845

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4.6A, 4.5V, Vgs (th) (Maks) @ Id: 800mV @ 250µA,

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Vishay Siliconix

SI3585DV-T1-E3

bahagian bahagian: 2733

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, 1.5A, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Maks) @ Id: 600mV @ 250µA (Min),

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Vishay Siliconix

SI4916DY-T1-E3

bahagian bahagian: 159074

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, 10.5A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI7872DP-T1-E3

bahagian bahagian: 71511

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI6966DQ-T1-E3

bahagian bahagian: 2873

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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Vishay Siliconix

SI4992EY-T1-E3

bahagian bahagian: 2722

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 48 mOhm @ 4.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4967DY-T1-GE3

bahagian bahagian: 3379

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

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Vishay Siliconix

SI1972DH-T1-E3

bahagian bahagian: 2739

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, Rds On (Maks) @ Id, Vgs: 225 mOhm @ 1.3A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

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