Diod - Zener - Bujang | Produk Semikonduktor Diskrit | 100

BZT52C43-G3-08

bahagian bahagian: 145887

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 32V,

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Vishay Semiconductor Diodes Division

BZT52C56-E3-08

bahagian bahagian: 163406

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 135 Ohms,

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Vishay Semiconductor Diodes Division

BZX384C15-E3-18

bahagian bahagian: 143578

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 10.5V,

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Vishay Semiconductor Diodes Division

BZX384C3V0-G3-18

bahagian bahagian: 136108

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384C10-G3-18

bahagian bahagian: 132016

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 7V,

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Vishay Semiconductor Diodes Division

BZX384C56-G3-18

bahagian bahagian: 168817

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 200 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 39.2V,

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Vishay Semiconductor Diodes Division

BZX384B12-HE3-18

bahagian bahagian: 153096

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZX384B5V1-G3-08

bahagian bahagian: 108115

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 2V,

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Vishay Semiconductor Diodes Division

BZT52B56-E3-08

bahagian bahagian: 199207

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 135 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B56-HE3-08

bahagian bahagian: 151566

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 135 Ohms,

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Vishay Semiconductor Diodes Division

BZT52C13-HE3-08

bahagian bahagian: 183023

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 9 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10V,

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Vishay Semiconductor Diodes Division

BZX384B3V9-G3-08

bahagian bahagian: 179837

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52B6V2-G3-18

bahagian bahagian: 161213

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V,

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Vishay Semiconductor Diodes Division

BZX384B5V6-G3-18

bahagian bahagian: 184405

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2V,

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Vishay Semiconductor Diodes Division

BZT52B3V0-E3-18

bahagian bahagian: 153605

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZT52C12-G3-18

bahagian bahagian: 305

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 9V,

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Vishay Semiconductor Diodes Division

BZX384C24-HE3-18

bahagian bahagian: 155562

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 16.8V,

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Vishay Semiconductor Diodes Division

BZT52B9V1-E3-18

bahagian bahagian: 132477

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7V,

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Vishay Semiconductor Diodes Division

BZX384B3V3-E3-18

bahagian bahagian: 113172

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384C47-E3-18

bahagian bahagian: 172525

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 170 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 32.9V,

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Vishay Semiconductor Diodes Division

BZT52C30-HE3-18

bahagian bahagian: 149823

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 35 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 22.5V,

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Vishay Semiconductor Diodes Division

BZX384B18-HE3-08

bahagian bahagian: 193794

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 12.6V,

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Vishay Semiconductor Diodes Division

BZT52B62-E3-18

bahagian bahagian: 142070

Voltan - Zener (Nom) (Vz): 62V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 150 Ohms,

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Vishay Semiconductor Diodes Division

BZX384B47-HE3-18

bahagian bahagian: 157676

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 170 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 32.9V,

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Vishay Semiconductor Diodes Division

BZX384B15-G3-18

bahagian bahagian: 186436

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 10.5V,

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Vishay Semiconductor Diodes Division

BZX384C47-HE3-18

bahagian bahagian: 124096

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 170 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 32.9V,

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Vishay Semiconductor Diodes Division

BZX384C11-HE3-18

bahagian bahagian: 153398

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZT52C75-E3-08

bahagian bahagian: 169954

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 250 Ohms,

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Vishay Semiconductor Diodes Division

BZX384C30-E3-18

bahagian bahagian: 108367

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 21V,

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Vishay Semiconductor Diodes Division

BZT52B43-HE3-18

bahagian bahagian: 183484

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 32V,

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Vishay Semiconductor Diodes Division

BZX384B5V6-E3-08

bahagian bahagian: 149993

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2V,

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Vishay Semiconductor Diodes Division

BZX384B27-HE3-18

bahagian bahagian: 161697

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 18.9V,

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Vishay Semiconductor Diodes Division

BZX384B16-E3-18

bahagian bahagian: 131610

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 11.2V,

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Vishay Semiconductor Diodes Division

BZX384C4V7-E3-18

bahagian bahagian: 152829

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 2V,

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Vishay Semiconductor Diodes Division

BZT52B51-HE3-08

bahagian bahagian: 107742

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 38V,

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Vishay Semiconductor Diodes Division

BZX384C7V5-HE3-18

bahagian bahagian: 156689

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 5V,

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