Transistor - FET, MOSFET - Susunan

BSC0923NDIATMA1

bahagian bahagian: 151164

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A, 32A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

BSC0924NDIATMA1

bahagian bahagian: 152816

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A, 32A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

BSO604NS2XUMA1

bahagian bahagian: 154962

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 30µA,

BSO207PHXUMA1

bahagian bahagian: 161068

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 44µA,

BSO211PHXUMA1

bahagian bahagian: 164134

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 67 mOhm @ 4.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 25µA,

BSO615CGHUMA1

bahagian bahagian: 2523

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, 2A, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 2V @ 20µA,

BSO612CVGHUMA1

bahagian bahagian: 171470

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, 2A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 4V @ 20µA,

BSZ15DC02KDHXTMA1

bahagian bahagian: 166896

Jenis FET: N and P-Channel Complementary, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A, 3.2A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 110µA,

BSD840NH6327XTSA1

bahagian bahagian: 124088

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 880mA, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V, Vgs (th) (Maks) @ Id: 750mV @ 1.6µA,

BSC0925NDATMA1

bahagian bahagian: 145035

Jenis FET: 2 N Channel (Dual Buck Chopper), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

BSL308PEH6327XTSA1

bahagian bahagian: 149358

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 2A, 10V, Vgs (th) (Maks) @ Id: 1V @ 11µA,

BSL306NH6327XTSA1

bahagian bahagian: 118173

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 57 mOhm @ 2.3A, 10V, Vgs (th) (Maks) @ Id: 2V @ 11µA,

BSL215CH6327XTSA1

bahagian bahagian: 146349

Jenis FET: N and P-Channel Complementary, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 3.7µA,

BSL207NH6327XTSA1

bahagian bahagian: 152011

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.1A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 2.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 11µA,

BSL314PEH6327XTSA1

bahagian bahagian: 198370

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 140 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 6.3µA,

BSL205NH6327XTSA1

bahagian bahagian: 102698

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 11µA,

BSL806NH6327XTSA1

bahagian bahagian: 103295

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.8V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A (Ta), Rds On (Maks) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V, Vgs (th) (Maks) @ Id: 750mV @ 11µA,

BSL214NH6327XTSA1

bahagian bahagian: 161005

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 3.7µA,

BSL316CH6327XTSA1

bahagian bahagian: 148518

Jenis FET: N and P-Channel Complementary, Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A, 1.5A, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 1.4A, 10V, Vgs (th) (Maks) @ Id: 2V @ 3.7µA,

BSD235CH6327XTSA1

bahagian bahagian: 113505

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 950mA, 530mA, Rds On (Maks) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 1.6µA,

BSD340NH6327XTSA1

bahagian bahagian: 125807

BSD223PH6327XTSA1

bahagian bahagian: 154052

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 390mA, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 1.5µA,

BUK9K18-40E,115

bahagian bahagian: 171171

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 1mA,

BUK7K89-100EX

bahagian bahagian: 171159

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, Rds On (Maks) @ Id, Vgs: 82.5 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

BUK7K35-60EX

bahagian bahagian: 171150

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20.7A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

BUK9K35-60E,115

bahagian bahagian: 173396

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 1mA,

BUK9K25-40EX

bahagian bahagian: 189585

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18.2A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 1mA,

BUK7K134-100EX

bahagian bahagian: 189649

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.8A, Rds On (Maks) @ Id, Vgs: 121 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

BUK9K52-60E,115

bahagian bahagian: 189585

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, Rds On (Maks) @ Id, Vgs: 49 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 1mA,

BUK7K52-60EX

bahagian bahagian: 189556

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15.4A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

BUK7K25-40E,115

bahagian bahagian: 189622

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

BSS138PS,115

bahagian bahagian: 105738

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 320mA, Rds On (Maks) @ Id, Vgs: 1.6 Ohm @ 300mA, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

BSS138BKSH

bahagian bahagian: 2543

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 320mA (Ta), Rds On (Maks) @ Id, Vgs: 1.6 Ohm @ 320mA, 10V, Vgs (th) (Maks) @ Id: 1.6V @ 250µA,

BSS8402DW-7-F

bahagian bahagian: 183344

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 115mA, 130mA, Rds On (Maks) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

BSS84DW-7-F

bahagian bahagian: 147379

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 130mA, Rds On (Maks) @ Id, Vgs: 10 Ohm @ 100mA, 5V, Vgs (th) (Maks) @ Id: 2V @ 1mA,

VT6J1T2CR

bahagian bahagian: 168368

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, 1.2V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 100µA,