Transistor - FET, MOSFET - Susunan

NTGD4167CT1G

bahagian bahagian: 114403

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, 1.9A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDMS3664S

bahagian bahagian: 180120

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 25A, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

NTJD1155LT1G

bahagian bahagian: 149235

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, Rds On (Maks) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDMD8560L

bahagian bahagian: 41533

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A, 93A, Rds On (Maks) @ Id, Vgs: 3.2 mOhm @ 22A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

EFC4C012NLTDG

bahagian bahagian: 115

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Vgs (th) (Maks) @ Id: 2.2V @ 1mA,

NVMFD5C462NLT1G

bahagian bahagian: 139

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Ta), 84A (Tc), Rds On (Maks) @ Id, Vgs: 4.7 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 40µA,

FDMS7700S

bahagian bahagian: 61271

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 22A, Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

ECH8654-TL-H

bahagian bahagian: 186362

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 3A, 4.5V,

SI6975DQ-T1-E3

bahagian bahagian: 56765

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 5mA (Min),

SI6975DQ-T1-GE3

bahagian bahagian: 89660

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 5mA (Min),

SI6954ADQ-T1-GE3

bahagian bahagian: 102782

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, Rds On (Maks) @ Id, Vgs: 53 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

SI7904BDN-T1-GE3

bahagian bahagian: 165688

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 7.1A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SI4276DY-T1-E3

bahagian bahagian: 139906

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

DMC6070LND-7

bahagian bahagian: 115806

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, 2.4A, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

DMHC4035LSD-13

bahagian bahagian: 190231

Jenis FET: 2 N and 2 P-Channel (H-Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, 3.7A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 3.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

DMS3019SSD-13

bahagian bahagian: 162279

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, 5.7A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

DMN2022UNS-7

bahagian bahagian: 109123

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.7A (Ta), Rds On (Maks) @ Id, Vgs: 10.8 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

DMN3016LDV-13

bahagian bahagian: 145769

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21A (Tc), Rds On (Maks) @ Id, Vgs: 12 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

DMP4047SSD-13

bahagian bahagian: 153243

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 4.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

DMP22D4UDA-7B

bahagian bahagian: 125

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 328mA (Ta), Rds On (Maks) @ Id, Vgs: 1.9 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

DMTH6016LSDQ-13

bahagian bahagian: 146385

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.6A (Ta), Rds On (Maks) @ Id, Vgs: 19.5 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

DMC4029SSDQ-13

bahagian bahagian: 181

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), 6.5A (Ta), Rds On (Maks) @ Id, Vgs: 24 mOhm @ 6A, 10V, 45 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

DMG4822SSDQ-13

bahagian bahagian: 186

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

ZXMD63N03XTA

bahagian bahagian: 63691

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 135 mOhm @ 1.7A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

DMG1026UVQ-7

bahagian bahagian: 165393

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 440mA (Ta), Rds On (Maks) @ Id, Vgs: 1.8 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 1.8V @ 250µA,

DMG9926USD-13

bahagian bahagian: 131794

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 8.2A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

DMC3025LDV-13

bahagian bahagian: 182397

Jenis FET: N and P-Channel, Ciri FET: Standard, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

DMN65D8LDWQ-13

bahagian bahagian: 110709

DMN13M9UCA6-7

bahagian bahagian: 87

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

UPA3753GR-E1-AT

bahagian bahagian: 158590

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 56 mOhm @ 2.5A, 10V,

SLA5037

bahagian bahagian: 14765

Jenis FET: 4 N-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250mA,

SLA5096

bahagian bahagian: 27227

Jenis FET: 3 N and 3 P-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A,

SP8K52FRATB

bahagian bahagian: 115

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Ta), Rds On (Maks) @ Id, Vgs: 170 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

TT8J3TR

bahagian bahagian: 193760

Jenis FET: 2 P-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 84 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

MCCD2005-TP

bahagian bahagian: 159326

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

MTM684110LBF

bahagian bahagian: 152523

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 1A, 5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,