Transistor - FET, MOSFET - Susunan

SI6968BEDQ-T1-E3

bahagian bahagian: 118914

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.6V @ 250µA,

SI7904BDN-T1-E3

bahagian bahagian: 165763

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 7.1A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SI4948BEY-T1-GE3

bahagian bahagian: 125231

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.4A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI4946BEY-T1-E3

bahagian bahagian: 150097

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, Rds On (Maks) @ Id, Vgs: 41 mOhm @ 5.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI4808DY-T1-GE3

bahagian bahagian: 80857

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.7A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 800mV @ 250µA (Min),

SI3951DV-T1-GE3

bahagian bahagian: 199685

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, Rds On (Maks) @ Id, Vgs: 115 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDS6930B

bahagian bahagian: 174209

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 5.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDS6990A

bahagian bahagian: 143253

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5485NLT1G

bahagian bahagian: 84490

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 44 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

MCH6662-TL-W

bahagian bahagian: 197593

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.8V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

FDMS8090

bahagian bahagian: 54867

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

FDPC8014AS

bahagian bahagian: 56655

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, 40A, Rds On (Maks) @ Id, Vgs: 3.8 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

FDMA1028NZ-F021

bahagian bahagian: 89

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, Rds On (Maks) @ Id, Vgs: 68 mOhm @ 3.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTLUD4C26NTBG

bahagian bahagian: 107408

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.1A (Ta), Rds On (Maks) @ Id, Vgs: 21 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

NTUD3174NZT5G

bahagian bahagian: 123413

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA (Ta), Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 100µA,

FDMD8240LET40

bahagian bahagian: 53084

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24A, Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 23A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTLJD3119CTBG

bahagian bahagian: 189185

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, 2.3A, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NTUD3169CZT5G

bahagian bahagian: 116437

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, 200mA, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

DMN65D8LDWQ-7

bahagian bahagian: 101082

DMG6968UTS-13

bahagian bahagian: 187139

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 950mV @ 250µA,

DMC3016LNS-7

bahagian bahagian: 184096

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), 6.8A (Ta), Rds On (Maks) @ Id, Vgs: 16 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

DMC3016LSD-13

bahagian bahagian: 127604

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.2A, 6.2A, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 250µA,

HTMN5130SSD-13

bahagian bahagian: 82476

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

DMG9933USD-13

bahagian bahagian: 177140

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 4.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

DMC3026LSD-13

bahagian bahagian: 205

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.2A (Ta), 8A (Ta), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 6A, 10V, 28 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

DMPH6050SSD-13

bahagian bahagian: 115772

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A (Ta), Rds On (Maks) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

ZXMC10A816N8TC

bahagian bahagian: 169825

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 230 mOhm @ 1A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

DMN1250UFEL-7

bahagian bahagian: 191350

Jenis FET: 8 N-Channel, Common Gate, Common Source, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

ZXMN6A25DN8TA

bahagian bahagian: 101872

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 3.6A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

SP8M5FRATB

bahagian bahagian: 154

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), 7A (Ta), Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6A, 10V, 28 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

SP8M6FRATB

bahagian bahagian: 153

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A (Ta), 3.5A (Ta), Rds On (Maks) @ Id, Vgs: 51 mOhm @ 5A, 10V, 90 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

SP8M21FRATB

bahagian bahagian: 70

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 45V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), 4A (Ta), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 6A, 10V, 46 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

EPC2105ENGRT

bahagian bahagian: 13745

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.5A, Rds On (Maks) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 2.5mA,

STL7DN6LF3

bahagian bahagian: 117469

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 43 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

UPA2660T1R-E2-AX

bahagian bahagian: 164961

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 62 mOhm @ 2A, 4.5V,

UPA2690T1R-E2-AX

bahagian bahagian: 161730

Jenis FET: N and P-Channel Complementary, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, 3A, Rds On (Maks) @ Id, Vgs: 42 mOhm @ 2A, 4.5V,