Transistor - FET, MOSFET - Susunan

FDD3510H

bahagian bahagian: 147680

Jenis FET: N and P-Channel, Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, 2.8A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 4.3A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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FDS6900AS

bahagian bahagian: 159056

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.9A, 8.2A, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 6.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDS6898A

bahagian bahagian: 128074

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.4A, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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FDMB3900AN

bahagian bahagian: 118545

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDS6875

bahagian bahagian: 133470

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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MCH6663-TL-W

bahagian bahagian: 154760

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.8A, 1.5A, Rds On (Maks) @ Id, Vgs: 188 mOhm @ 900mA, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 1mA,

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FDS6912A

bahagian bahagian: 171009

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDMD86100

bahagian bahagian: 131

Jenis FET: 2 N-Channel (Dual) Common Source, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 10.5 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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NTLLD4951NFTWG

bahagian bahagian: 61646

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, 6.3A, Rds On (Maks) @ Id, Vgs: 17.4 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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US6K2TR

bahagian bahagian: 124293

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 1.4A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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EM6K33T2R

bahagian bahagian: 182538

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.2V Drive, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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SP8M4FRATB

bahagian bahagian: 91

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), 7A (Ta), Rds On (Maks) @ Id, Vgs: 18 mOhm @ 9A, 10V, 28 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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SP8K31FRATB

bahagian bahagian: 99

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A (Ta), Rds On (Maks) @ Id, Vgs: 120 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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DMN6070SSD-13

bahagian bahagian: 104685

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.3A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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DMTH6016LSD-13

bahagian bahagian: 190248

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.6A (Ta), Rds On (Maks) @ Id, Vgs: 19.5 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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DMN2028UFDH-7

bahagian bahagian: 132521

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.8A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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DMG4822SSD-13

bahagian bahagian: 199433

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 8.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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DMG6898LSD-13

bahagian bahagian: 109166

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.5A, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 9.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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DMC6040SSD-13

bahagian bahagian: 146822

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A, 3.1A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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ZXMHC6A07N8TC

bahagian bahagian: 158542

Jenis FET: 2 N and 2 P-Channel (H-Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.39A, 1.28A, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 1.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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DMG6301UDW-7

bahagian bahagian: 168789

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 240mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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DMC3016LDV-13

bahagian bahagian: 172087

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21A (Tc), 15A (Tc), Rds On (Maks) @ Id, Vgs: 12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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DMC2990UDJQ-7

bahagian bahagian: 147861

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 450mA (Ta), 310mA (Ta), Rds On (Maks) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, 1.9 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Monolithic Power Systems Inc.

DMNH6042SSD-13

bahagian bahagian: 182552

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16.7A (Tc), Rds On (Maks) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Microchip Technology

TC6321T-V/9U

bahagian bahagian: 64633

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Rds On (Maks) @ Id, Vgs: 7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V, Vgs (th) (Maks) @ Id: 2V @ 1mA, 2.4V @ 1mA,

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LN60A01ES-LF

bahagian bahagian: 77637

Jenis FET: 3 N-Channel, Common Gate, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80mA, Rds On (Maks) @ Id, Vgs: 190 Ohm @ 10mA, 10V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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SI7923DN-T1-E3

bahagian bahagian: 101885

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 47 mOhm @ 6.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI5902BDC-T1-E3

bahagian bahagian: 125159

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Tc), Rds On (Maks) @ Id, Vgs: 65 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI5908DC-T1-GE3

bahagian bahagian: 118967

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SIZ904DT-T1-GE3

bahagian bahagian: 140725

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 16A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 7.8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SI7923DN-T1-GE3

bahagian bahagian: 101842

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 47 mOhm @ 6.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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