Transistor - FET, MOSFET - Susunan

SP8K32FRATB

bahagian bahagian: 80

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), Rds On (Maks) @ Id, Vgs: 65 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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HP8S36TB

bahagian bahagian: 130641

Jenis FET: 2 N-Channel (Half Bridge), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27A, 80A, Rds On (Maks) @ Id, Vgs: 2.4 mOhm @ 32A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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US6K1TR

bahagian bahagian: 126806

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

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US6M2GTR

bahagian bahagian: 127

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, 1A, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V, 390 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA, 2V @ 1mA,

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HS8K11TB

bahagian bahagian: 188805

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, 11A, Rds On (Maks) @ Id, Vgs: 17.9 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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TT8K2TR

bahagian bahagian: 164928

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

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Panasonic Electronic Components

TT8M2TR

bahagian bahagian: 126279

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

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FC8J33040L

bahagian bahagian: 178049

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 33V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 260µA,

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ZXMN2088DE6TA

bahagian bahagian: 158779

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A, Rds On (Maks) @ Id, Vgs: 200 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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DMC3025LDV-7

bahagian bahagian: 189831

Jenis FET: N and P-Channel, Ciri FET: Standard, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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DMHC6070LSD-13

bahagian bahagian: 158503

Jenis FET: 2 N and 2 P-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, 2.4A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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DMC3021LSDQ-13

bahagian bahagian: 112926

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.5A, 7A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

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DMC3028LSDX-13

bahagian bahagian: 179812

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, 5.8A, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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ZXMN6A09DN8TA

bahagian bahagian: 63423

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 8.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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ECH8695R-TL-W

bahagian bahagian: 130870

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A, Rds On (Maks) @ Id, Vgs: 9.1 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

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FDMS3606S

bahagian bahagian: 103403

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 27A, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

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FW297-TL-2W

bahagian bahagian: 151817

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 1mA,

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FDMS3602AS

bahagian bahagian: 95320

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, 26A, Rds On (Maks) @ Id, Vgs: 5.6 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDMC7208S

bahagian bahagian: 116029

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 16A, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDMS7600AS

bahagian bahagian: 69548

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 22A, Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDMD8680

bahagian bahagian: 74712

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 66A (Tc), Rds On (Maks) @ Id, Vgs: 4.7 mOhm @ 16A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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NVMD6P02R2G

bahagian bahagian: 115513

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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FDMQ86530L

bahagian bahagian: 57140

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 17.5 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI4532DY

bahagian bahagian: 183986

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.9A, 3.5A, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 3.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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NTLUD4C26NTAG

bahagian bahagian: 108

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.1A (Ta), Rds On (Maks) @ Id, Vgs: 21 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

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SI4943BDY-T1-GE3

bahagian bahagian: 73684

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.3A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 8.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SI6954ADQ-T1-E3

bahagian bahagian: 197681

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, Rds On (Maks) @ Id, Vgs: 53 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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SI8900EDB-T2-E1

bahagian bahagian: 45537

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A, Vgs (th) (Maks) @ Id: 1V @ 1.1mA,

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