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Transistor - FET, MOSFET - Susunan

DMN4026SSDQ-13
Diodes Incorporated

DMN4026SSDQ-13

bahagian bahagian: 155222

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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DMS3017SSD-13
Diodes Incorporated

DMS3017SSD-13

bahagian bahagian: 185603

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, 6A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 9.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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DMN3033LSD-13
Diodes Incorporated

DMN3033LSD-13

bahagian bahagian: 155650

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.9A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 6.9A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

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DMC6040SSDQ-13
Diodes Incorporated

DMC6040SSDQ-13

bahagian bahagian: 175181

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A (Ta), Rds On (Maks) @ Id, Vgs: 40 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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DMP2035UTS-13
Diodes Incorporated

DMP2035UTS-13

bahagian bahagian: 121298

Jenis FET: 2 P-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.04A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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DMP3048LSD-13
Diodes Incorporated

DMP3048LSD-13

bahagian bahagian: 155

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A (Ta), Rds On (Maks) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 1.3V @ 250µA,

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DMG4932LSD-13
Diodes Incorporated

DMG4932LSD-13

bahagian bahagian: 198063

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.5A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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DMP6050SSD-13
Diodes Incorporated

DMP6050SSD-13

bahagian bahagian: 126823

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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DMN6022SSD-13
Diodes Incorporated

DMN6022SSD-13

bahagian bahagian: 175957

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), 14A (Tc), Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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DMC4029SK4-13
Diodes Incorporated

DMC4029SK4-13

bahagian bahagian: 187840

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.3A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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DMG6301UDW-13
Diodes Incorporated

DMG6301UDW-13

bahagian bahagian: 187231

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 240mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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ZXMC4A16DN8TA
Diodes Incorporated

ZXMC4A16DN8TA

bahagian bahagian: 141777

Jenis FET: N and P-Channel Complementary, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A (Ta), 4.7A (Ta), Rds On (Maks) @ Id, Vgs: 50 mOhm @ 4.5A, 10V, 60 mOhm @ 3.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250mA (Min),

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ZXMP6A18DN8TA
Diodes Incorporated

ZXMP6A18DN8TA

bahagian bahagian: 69255

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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DMHC4035LSDQ-13
Diodes Incorporated

DMHC4035LSDQ-13

bahagian bahagian: 148621

Jenis FET: 2 N and 2 P-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), 3.7A (Ta), Rds On (Maks) @ Id, Vgs: 45 mOhm @ 3.9A, 10V, 65 mOhm @ 4.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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DMC3730UFL3-7
Diodes Incorporated

DMC3730UFL3-7

bahagian bahagian: 145530

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.1A, 700mA, Rds On (Maks) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 950mV @ 250µA,

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DMHC10H170SFJ-13
Diodes Incorporated

DMHC10H170SFJ-13

bahagian bahagian: 133992

Jenis FET: 2 N and 2 P-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, 2.3A, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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DMP6110SSD-13
Diodes Incorporated

DMP6110SSD-13

bahagian bahagian: 102694

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.3A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FQS4900TF
ON Semiconductor

FQS4900TF

bahagian bahagian: 117878

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, 300V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, 300mA, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 650mA, 10V, Vgs (th) (Maks) @ Id: 1.95V @ 20mA,

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NVMFD5C668NLT1G
ON Semiconductor

NVMFD5C668NLT1G

bahagian bahagian: 46

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15.5A (Ta), 68A (Tc), Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2V @ 50µA,

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FDMS3660AS
ON Semiconductor

FDMS3660AS

bahagian bahagian: 111729

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 30A, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

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ECH8690-TL-H
ON Semiconductor

ECH8690-TL-H

bahagian bahagian: 156738

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.7A, 3.5A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 2A, 10V,

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NTMD6N03R2G
ON Semiconductor

NTMD6N03R2G

bahagian bahagian: 188884

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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ECH8657-TL-H
ON Semiconductor

ECH8657-TL-H

bahagian bahagian: 165958

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 35V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 59 mOhm @ 2A, 10V,

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NVMFD5C466NWFT1G
ON Semiconductor

NVMFD5C466NWFT1G

bahagian bahagian: 175

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), 49A (Tc), Rds On (Maks) @ Id, Vgs: 8.1 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

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NTZD3158PT1G
ON Semiconductor

NTZD3158PT1G

bahagian bahagian: 177029

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 430mA, Rds On (Maks) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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FDMS3600AS
ON Semiconductor

FDMS3600AS

bahagian bahagian: 89370

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, 30A, Rds On (Maks) @ Id, Vgs: 5.6 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

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ECH8668-TL-H
ON Semiconductor

ECH8668-TL-H

bahagian bahagian: 150790

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, 5A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 4A, 4.5V,

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NVMD4N03R2G
ON Semiconductor

NVMD4N03R2G

bahagian bahagian: 187212

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDMA1023PZ-F106
ON Semiconductor

FDMA1023PZ-F106

bahagian bahagian: 63

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A (Ta), Rds On (Maks) @ Id, Vgs: 72 mOhm @ 3.7A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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MTM763200LBF
Panasonic Electronic Components

MTM763200LBF

bahagian bahagian: 150350

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.9A, 1.2A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 1A, 4V, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

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FC8V33030L
Panasonic Electronic Components

FC8V33030L

bahagian bahagian: 192655

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 33V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 3.3A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 480µA,

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TC6320K6-G
Microchip Technology

TC6320K6-G

bahagian bahagian: 71235

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Rds On (Maks) @ Id, Vgs: 7 Ohm @ 1A, 10V, Vgs (th) (Maks) @ Id: 2V @ 1mA,

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TC8020K6-G-M937
Microchip Technology

TC8020K6-G-M937

bahagian bahagian: 11166

Jenis FET: 6 N and 6 P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 1A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 1mA,

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LN60A01EP-LF
Monolithic Power Systems Inc.

LN60A01EP-LF

bahagian bahagian: 56695

Jenis FET: 3 N-Channel, Common Gate, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80mA, Rds On (Maks) @ Id, Vgs: 190 Ohm @ 10mA, 10V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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SP8K24FRATB
Rohm Semiconductor

SP8K24FRATB

bahagian bahagian: 123

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 45V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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TT8J2TR
Rohm Semiconductor

TT8J2TR

bahagian bahagian: 170382

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 84 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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