Transistor - FET, MOSFET - Susunan

EFC2J017NUZTDG

bahagian bahagian: 166927

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

FDMS3669S

bahagian bahagian: 164375

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 18A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

EFC4627R-TR

bahagian bahagian: 182266

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive,

FDG6332C

bahagian bahagian: 126485

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 700mA, 600mA, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDC6303N

bahagian bahagian: 175306

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 680mA, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FW216A-TL-2WX

bahagian bahagian: 3039

ECH8691-TL-W

bahagian bahagian: 147834

NVMFD5489NLWFT3G

bahagian bahagian: 97513

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

FDS6961A

bahagian bahagian: 151064

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5C478NLWFT1G

bahagian bahagian: 6481

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.5A (Ta), 29A (Tc), Rds On (Maks) @ Id, Vgs: 14.5 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 20µA,

FDMD8280

bahagian bahagian: 48032

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A, Rds On (Maks) @ Id, Vgs: 8.2 mOhm @ 11A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

EFC4621R-TR

bahagian bahagian: 191534

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 2.5V Drive,

FDG6304P-X

bahagian bahagian: 2943

CSD87334Q3D

bahagian bahagian: 121075

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 6 mOhm @ 12A, 8V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

CSD87503Q3ET

bahagian bahagian: 4047

Jenis FET: 2 N-Channel (Dual) Common Source, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

CSD88539ND

bahagian bahagian: 153712

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3.6V @ 250µA,

DMNH6021SPDQ-13

bahagian bahagian: 153434

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.2A, 32A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

DMN61D8LVT-13

bahagian bahagian: 146214

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA, Rds On (Maks) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V, Vgs (th) (Maks) @ Id: 2V @ 1mA,

ZXMHC10A07N8TC

bahagian bahagian: 135940

Jenis FET: 2 N and 2 P-Channel (H-Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 800mA, 680mA, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

ZXMC3A16DN8TC

bahagian bahagian: 118900

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A, 4.1A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

DMP2075UFDB-7

bahagian bahagian: 218

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A (Ta), Rds On (Maks) @ Id, Vgs: 75 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

DMP1046UFDB-7

bahagian bahagian: 127126

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A, Rds On (Maks) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SQJ844AEP-T1_GE3

bahagian bahagian: 165127

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 16.6 mOhm @ 7.6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

SI4511DY-T1-E3

bahagian bahagian: 3311

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.2A, 4.6A, Rds On (Maks) @ Id, Vgs: 14.5 mOhm @ 9.6A, 10V, Vgs (th) (Maks) @ Id: 1.8V @ 250µA,

SI5511DC-T1-GE3

bahagian bahagian: 3024

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, 3.6A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

SSM6N357R,LF

bahagian bahagian: 16211

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 650mA (Ta), Rds On (Maks) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V, Vgs (th) (Maks) @ Id: 2V @ 1mA,

SSM6P35FE(TE85L,F)

bahagian bahagian: 121978

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 50mA, 4V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

GWM120-0075P3

bahagian bahagian: 2981

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 118A, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 60A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

FMP26-02P

bahagian bahagian: 4082

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 26A, 17A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 25A, 10V, Vgs (th) (Maks) @ Id: 5V @ 250µA,

GWM180-004X2-SLSAM

bahagian bahagian: 3050

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A, Rds On (Maks) @ Id, Vgs: 2.5 mOhm @ 100A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

SLA5060

bahagian bahagian: 10412

Jenis FET: 3 N and 3 P-Channel (3-Phase Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 220 mOhm @ 3A, 4V,

SLA5073

bahagian bahagian: 12628

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 3A, 4V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

EPC2104ENGRT

bahagian bahagian: 13673

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A, Rds On (Maks) @ Id, Vgs: 6.3 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 5.5mA,

EPC2101ENGRT

bahagian bahagian: 13969

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.5A, 38A, Rds On (Maks) @ Id, Vgs: 11.5 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 2mA,

IRF8915TRPBF

bahagian bahagian: 198689

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.9A, Rds On (Maks) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

NX138BKSX

bahagian bahagian: 123100

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 210mA (Ta), Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 200mA, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,