Transistor - FET, MOSFET - Susunan

FDG6316P

bahagian bahagian: 198667

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 700mA, Rds On (Maks) @ Id, Vgs: 270 mOhm @ 700mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NVMFD5C470NWFT1G

bahagian bahagian: 6533

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.7A (Ta), 36A (Tc), Rds On (Maks) @ Id, Vgs: 11.7 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

NTMD5838NLR2G

bahagian bahagian: 169532

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.4A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5C446NLWFT1G

bahagian bahagian: 6513

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Ta), 145A (Tc), Rds On (Maks) @ Id, Vgs: 2.65 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 90µA,

NTMD6601NR2G

bahagian bahagian: 3001

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.1A, Rds On (Maks) @ Id, Vgs: 215 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMD8260L

bahagian bahagian: 45703

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 5.8 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDC6304P

bahagian bahagian: 105335

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 460mA, Rds On (Maks) @ Id, Vgs: 1.1 Ohm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

MMDF2C03HDR2G

bahagian bahagian: 3144

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A, 3A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

EFC8811R-TF

bahagian bahagian: 164408

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive,

NVMFD5C674NLWFT1G

bahagian bahagian: 6508

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), 42A (Tc), Rds On (Maks) @ Id, Vgs: 14.4 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 25µA,

NTLUD3A50PZTBG

bahagian bahagian: 190294

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.8A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NVMFD5483NLWFT1G

bahagian bahagian: 63618

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

FD6M016N03

bahagian bahagian: 2999

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A, Rds On (Maks) @ Id, Vgs: 1.6 mOhm @ 40A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

CSD87312Q3E

bahagian bahagian: 166053

Jenis FET: 2 N-Channel (Dual) Common Source, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 7A , 8V, Vgs (th) (Maks) @ Id: 1.3V @ 250µA,

CSD87384MT

bahagian bahagian: 49054

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A, Rds On (Maks) @ Id, Vgs: 7.7 mOhm @ 25A, 8V, Vgs (th) (Maks) @ Id: 1.9V @ 250µA,

CSD88584Q5DC

bahagian bahagian: 25476

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Rds On (Maks) @ Id, Vgs: 0.95 mOhm @ 30A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 250µA,

DMHT6016LFJ-13

bahagian bahagian: 96906

Jenis FET: 4 N-Channel, Ciri FET: Standard, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14.8A (Ta), Rds On (Maks) @ Id, Vgs: 22 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

ZXMHN6A07T8TA

bahagian bahagian: 222

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 1.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

DMN3016LDN-7

bahagian bahagian: 134043

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.3A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 11A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

ZXMN2AMCTA

bahagian bahagian: 189

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A (Ta), Rds On (Maks) @ Id, Vgs: 120 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

DMN63D1LV-7

bahagian bahagian: 9996

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 550mA (Ta), Rds On (Maks) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

ZXMN3AMCTA

bahagian bahagian: 128489

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A (Ta), Rds On (Maks) @ Id, Vgs: 120 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

DMN4027SSD-13

bahagian bahagian: 149358

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

ZXMN3F31DN8TA

bahagian bahagian: 127158

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.7A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

UPA2383T1P-E1-A#YW

bahagian bahagian: 3021

SI4922BDY-T1-E3

bahagian bahagian: 124158

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 1.8V @ 250µA,

SI1903DL-T1-GE3

bahagian bahagian: 3011

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 410mA, Rds On (Maks) @ Id, Vgs: 995 mOhm @ 410mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

SIZ702DT-T1-GE3

bahagian bahagian: 130304

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 13.8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

SI4932DY-T1-GE3

bahagian bahagian: 117478

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

SQJ500AEP-T1_GE3

bahagian bahagian: 123903

Jenis FET: N and P-Channel, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 250µA,

SIA913ADJ-T1-GE3

bahagian bahagian: 152374

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FMM75-01F

bahagian bahagian: 4572

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 50A, 10V, Vgs (th) (Maks) @ Id: 4V @ 4mA,

MKE38P600TLB-TRR

bahagian bahagian: 227

MKE38P600TLB

bahagian bahagian: 267

Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc),

VMK165-007T

bahagian bahagian: 1586

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 70V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 165A, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 82.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 8mA,

TPC8405(TE12L,Q,M)

bahagian bahagian: 3098

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 4.5A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 2V @ 1mA,