Transistor - FET, MOSFET - Susunan

UT6MA3TCR

UT6MA3TCR

bahagian bahagian: 168810

Jenis FET: N and P-Channel, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, 5.5A, Rds On (Maks) @ Id, Vgs: 59 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

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US6K4TR

US6K4TR

bahagian bahagian: 182371

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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SI4963BDY-T1-E3

SI4963BDY-T1-E3

bahagian bahagian: 147270

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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SI1926DL-T1-GE3

SI1926DL-T1-GE3

bahagian bahagian: 137693

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 370mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 340mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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SQJQ906E-T1_GE3

SQJQ906E-T1_GE3

bahagian bahagian: 8627

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 95A (Tc), Rds On (Maks) @ Id, Vgs: 3.3 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 250µA,

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SI4542DY-T1-E3

SI4542DY-T1-E3

bahagian bahagian: 5348

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 6.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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SIZ320DT-T1-GE3

SIZ320DT-T1-GE3

bahagian bahagian: 9923

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), 40A (Tc), Rds On (Maks) @ Id, Vgs: 8.3 mOhm @ 8A, 10V, 4.24 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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SIZ926DT-T1-GE3

SIZ926DT-T1-GE3

bahagian bahagian: 127180

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), 60A (Tc), Rds On (Maks) @ Id, Vgs: 4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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DMP2100UFU-13

DMP2100UFU-13

bahagian bahagian: 120668

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.7A, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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DMP56D0UV-7

DMP56D0UV-7

bahagian bahagian: 162948

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160mA, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 100mA, 4V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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DMTH4011SPDQ-13

DMTH4011SPDQ-13

bahagian bahagian: 10790

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.1A (Ta), 42A (Tc), Rds On (Maks) @ Id, Vgs: 15 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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DMN1033UCB4-7

DMN1033UCB4-7

bahagian bahagian: 176877

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate,

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DMN62D0UT-7

DMN62D0UT-7

bahagian bahagian: 168813

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DMP4050SSD-13

DMP4050SSD-13

bahagian bahagian: 182962

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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DMP4050SSDQ-13

DMP4050SSDQ-13

bahagian bahagian: 118936

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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DMN2990UDJ-7

DMN2990UDJ-7

bahagian bahagian: 123709

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 450mA, Rds On (Maks) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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DMC1028UFDB-13

DMC1028UFDB-13

bahagian bahagian: 170162

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 3.4A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 5.2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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DMC31D5UDJ-7

DMC31D5UDJ-7

bahagian bahagian: 115591

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, 200mA, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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DMN5L06DWK-7

DMN5L06DWK-7

bahagian bahagian: 166070

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 305mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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DMN3032LFDBQ-13

DMN3032LFDBQ-13

bahagian bahagian: 174423

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A (Ta), Rds On (Maks) @ Id, Vgs: 30 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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FDS8984_F123

FDS8984_F123

bahagian bahagian: 2990

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NTTFS5C466NLTAG

NTTFS5C466NLTAG

bahagian bahagian: 287

Jenis FET: N-Channel, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), 51A (Tc), Rds On (Maks) @ Id, Vgs: 7.3 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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FDMC8032L

FDMC8032L

bahagian bahagian: 190294

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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NTZD3155CT5G

NTZD3155CT5G

bahagian bahagian: 3321

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 540mA, 430mA, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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NTHD4401PT3G

NTHD4401PT3G

bahagian bahagian: 2940

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.1A, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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NVMFD5C478NLT1G

NVMFD5C478NLT1G

bahagian bahagian: 6504

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.5A (Ta), 29A (Tc), Rds On (Maks) @ Id, Vgs: 14.5 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 20µA,

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SSD2009ATF

SSD2009ATF

bahagian bahagian: 2953

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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HCT802TXV

HCT802TXV

bahagian bahagian: 1527

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 90V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, 1.1A, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 1A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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VMM90-09F

VMM90-09F

bahagian bahagian: 423

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 900V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 85A, Rds On (Maks) @ Id, Vgs: 76 mOhm @ 65A, 10V, Vgs (th) (Maks) @ Id: 5V @ 30mA,

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GWM180-004X2-SMDSAM

GWM180-004X2-SMDSAM

bahagian bahagian: 3093

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A, Rds On (Maks) @ Id, Vgs: 2.5 mOhm @ 100A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

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VMM1500-0075P

VMM1500-0075P

bahagian bahagian: 2957

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1500A, Rds On (Maks) @ Id, Vgs: 0.8 mOhm @ 1200A, 10V, Vgs (th) (Maks) @ Id: 4V @ 10mA,

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CAS325M12HM2

CAS325M12HM2

bahagian bahagian: 70

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 444A (Tc), Rds On (Maks) @ Id, Vgs: 4.3 mOhm @ 400A, 20V, Vgs (th) (Maks) @ Id: 4V @ 105mA,

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FCAB21490L1

FCAB21490L1

bahagian bahagian: 124322

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Vgs (th) (Maks) @ Id: 1.4V @ 1.11mA,

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SSM6L35FU(TE85L,F)

SSM6L35FU(TE85L,F)

bahagian bahagian: 156233

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 1.2V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA, 100mA, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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EPC2103ENGRT

EPC2103ENGRT

bahagian bahagian: 13895

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 7mA,

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STS8C5H30L

STS8C5H30L

bahagian bahagian: 97728

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, 5.4A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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