Transistor - FET, MOSFET - Susunan

DMN3032LFDB-7

bahagian bahagian: 142454

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

DMP2065UFDB-13

bahagian bahagian: 149887

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

DMC25D1UVT-7

bahagian bahagian: 109372

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, 3.9A, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

DMC6070LND-13

bahagian bahagian: 121554

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, 2.4A, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

DMNH4015SSDQ-13

bahagian bahagian: 176142

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.6A (Ta), Rds On (Maks) @ Id, Vgs: 15 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

ZXMN2AM832TA

bahagian bahagian: 106042

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA (Min),

ZXMC3AM832TA

bahagian bahagian: 3091

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, 2.1A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

ZXMC6A09DN8TA

bahagian bahagian: 63478

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.9A, 3.7A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 8.2A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

SI7949DP-T1-GE3

bahagian bahagian: 93111

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A, Rds On (Maks) @ Id, Vgs: 64 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SIZ340DT-T1-GE3

bahagian bahagian: 178844

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A, 40A, Rds On (Maks) @ Id, Vgs: 9.5 mOhm @ 15.6A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

SI5513DC-T1-GE3

bahagian bahagian: 3020

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, 2.1A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

SI4214DY-T1-GE3

bahagian bahagian: 138819

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.5A, Rds On (Maks) @ Id, Vgs: 23.5 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

SI4974DY-T1-E3

bahagian bahagian: 2958

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 4.4A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SIZ704DT-T1-GE3

bahagian bahagian: 146407

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 16A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 7.8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

SQJ942EP-T1_GE3

bahagian bahagian: 9979

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc), 45A (Tc), Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.8A, 10V, 11 mOhm @ 10.1A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 250µA,

SI7216DN-T1-GE3

bahagian bahagian: 113546

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

CSD87503Q3E

bahagian bahagian: 10848

Jenis FET: 2 N-Channel (Dual) Common Source, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), Rds On (Maks) @ Id, Vgs: 13.5 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

CSD87501LT

bahagian bahagian: 108175

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Vgs (th) (Maks) @ Id: 2.3V @ 250µA,

FDG6303N_G

bahagian bahagian: 2999

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FQS4903TF

bahagian bahagian: 95372

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 370mA, Rds On (Maks) @ Id, Vgs: 6.2 Ohm @ 185mA, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

FDMS7608S

bahagian bahagian: 172353

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 15A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

EFC6617R-TF

bahagian bahagian: 3361

FDC6318P

bahagian bahagian: 132159

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

VEC2415-TL-W

bahagian bahagian: 107431

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 1mA,

FDMS3602S

bahagian bahagian: 50082

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, 26A, Rds On (Maks) @ Id, Vgs: 5.6 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTQD6968N

bahagian bahagian: 2957

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

FDMD8580

bahagian bahagian: 44299

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Ta), 82A (Tc), Rds On (Maks) @ Id, Vgs: 4.6 mOhm @ 16A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 250µA,

TT8J1TR

bahagian bahagian: 2958

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 61 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

SH8K1TB1

bahagian bahagian: 189574

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

CMLDM7003 TR

bahagian bahagian: 147996

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 280mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

CMLDM5757 TR

bahagian bahagian: 161889

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 430mA, Rds On (Maks) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

CAS120M12BM2

bahagian bahagian: 257

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 193A (Tc), Rds On (Maks) @ Id, Vgs: 16 mOhm @ 120A, 20V, Vgs (th) (Maks) @ Id: 2.6V @ 6mA (Typ),

FMP76-010T

bahagian bahagian: 5246

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 62A, 54A, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 25A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 250µA,

IRF3546MTRPBF

bahagian bahagian: 18707

Jenis FET: 4 N-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc), 20A (Tc), Rds On (Maks) @ Id, Vgs: 3.9 mOhm @ 27A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 35µA,

TC8020K6-G

bahagian bahagian: 8617

Jenis FET: 6 N and 6 P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 200V, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 1A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 1mA,

TSM9933DCS RLG

bahagian bahagian: 10803

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.7A (Tc), Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,