Transistor - FET, MOSFET - Susunan

FC6546010R

bahagian bahagian: 108644

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 1µA,

ECH8601M-P-TL-H

bahagian bahagian: 2975

FDMB3900N

bahagian bahagian: 2995

FDS6984AS

bahagian bahagian: 199659

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, 8.5A, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 5.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

EFC6601R-TR

bahagian bahagian: 198703

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 2.5V Drive,

NVMFD5852NLWFT1G

bahagian bahagian: 76130

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 6.9 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

FDPC8013S

bahagian bahagian: 73996

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 26A, Rds On (Maks) @ Id, Vgs: 6.4 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDY2000PZ

bahagian bahagian: 195330

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 350mA, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTQD6968NR2

bahagian bahagian: 2953

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

FDC6310P

bahagian bahagian: 117394

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.2A, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NVMFD5483NLWFT3G

bahagian bahagian: 70979

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

DMN1029UFDB-7

bahagian bahagian: 192045

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.6A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

DMC4028SSD-13

bahagian bahagian: 191384

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, 4.8A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

ZXMP6A16DN8TA

bahagian bahagian: 193933

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.9A (Ta), Rds On (Maks) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

DMG1016VQ-7

bahagian bahagian: 134633

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 870mA, 640mA, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

DMP2200UDW-7

bahagian bahagian: 131211

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 900mA, Rds On (Maks) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

ZXMN2A04DN8TA

bahagian bahagian: 61374

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.9A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA (Min),

DMN3135LVT-7

bahagian bahagian: 125318

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

SI4532ADY-T1-GE3

bahagian bahagian: 135915

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, 3A, Rds On (Maks) @ Id, Vgs: 53 mOhm @ 4.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SI7236DP-T1-E3

bahagian bahagian: 45599

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A, Rds On (Maks) @ Id, Vgs: 5.2 mOhm @ 20.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

SI4936BDY-T1-GE3

bahagian bahagian: 125167

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.9A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 5.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SIZ902DT-T1-GE3

bahagian bahagian: 110652

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 13.8A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

SIZ720DT-T1-GE3

bahagian bahagian: 109371

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, Rds On (Maks) @ Id, Vgs: 8.7 mOhm @ 16.8A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

SI4200DY-T1-GE3

bahagian bahagian: 161224

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 7.3A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

SQJ560EP-T1_GE3

bahagian bahagian: 9941

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), 18A (Tc), Rds On (Maks) @ Id, Vgs: 12 mOhm @ 10A, 10V, 52.6 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

SI4542DY-T1-GE3

bahagian bahagian: 2980

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 6.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

SQJ941EP-T1-GE3

bahagian bahagian: 3133

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

SQJ200EP-T1_GE3

bahagian bahagian: 165186

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, 60A, Rds On (Maks) @ Id, Vgs: 8.8 mOhm @ 16A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

SP8M3FU6TB

bahagian bahagian: 134363

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, 4.5A, Rds On (Maks) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

MP6K13TCR

bahagian bahagian: 2950

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

IRF7555TRPBF

bahagian bahagian: 2960

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

IRF7325TRPBF

bahagian bahagian: 2988

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.8A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

IRL6372PBF

bahagian bahagian: 2978

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.1A, Rds On (Maks) @ Id, Vgs: 17.9 mOhm @ 8.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 10µA,

SLA5074

bahagian bahagian: 14538

Jenis FET: 4 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 3A, 4V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

SSM6N7002BFU,LF

bahagian bahagian: 154781

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 3.1V @ 250µA,

GMM3X60-015X2-SMDSAM

bahagian bahagian: 3115

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 38A, 10V, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,