Transistor - FET, MOSFET - Susunan

EMH2407-S-TL-H

bahagian bahagian: 2884

NTND3184NZTAG

bahagian bahagian: 107176

Jenis FET: 2 N-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA (Ta), Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FW344A-TL-2W

bahagian bahagian: 2933

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, 3.5A, Rds On (Maks) @ Id, Vgs: 64 mOhm @ 4.5A, 10V,

CPH5617-TL-E

bahagian bahagian: 186363

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150mA, Rds On (Maks) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V,

FDW2503N

bahagian bahagian: 2761

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 5.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDW2506P

bahagian bahagian: 2777

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 5.3A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

MMDF2P02ER2G

bahagian bahagian: 2699

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NDS8947

bahagian bahagian: 3294

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

NTZD3152PT1H

bahagian bahagian: 106213

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 430mA, Rds On (Maks) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NTGD4161PT1G

bahagian bahagian: 2811

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 2.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDC6020C

bahagian bahagian: 2737

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.9A, 4.2A, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTMD5836NLR2G

bahagian bahagian: 2882

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, 5.7A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI5944DU-T1-E3

bahagian bahagian: 2715

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 112 mOhm @ 3.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI1016X-T1-E3

bahagian bahagian: 2759

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 485mA, 370mA, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SI5904DC-T1-GE3

bahagian bahagian: 2807

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

SI9936BDY-T1-GE3

bahagian bahagian: 2872

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

VQ2001P-2

bahagian bahagian: 2875

Jenis FET: 4 P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 600mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 1A, 12V, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

SIA911DJ-T1-GE3

bahagian bahagian: 2844

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SI4814BDY-T1-E3

bahagian bahagian: 3376

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, 10.5A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI4818DY-T1-GE3

bahagian bahagian: 2835

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, 7A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 6.3A, 10V, Vgs (th) (Maks) @ Id: 800mV @ 250µA (Min),

SI7904DN-T1-E3

bahagian bahagian: 2818

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 7.7A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 935µA,

SI5920DC-T1-GE3

bahagian bahagian: 2868

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SI5519DU-T1-GE3

bahagian bahagian: 2823

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 6.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.8V @ 250µA,

SI1903DL-T1-E3

bahagian bahagian: 2791

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 410mA, Rds On (Maks) @ Id, Vgs: 995 mOhm @ 410mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

SI1905DL-T1-E3

bahagian bahagian: 2724

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 570mA, Rds On (Maks) @ Id, Vgs: 600 mOhm @ 570mA, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

SI6983DQ-T1-E3

bahagian bahagian: 2714

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 5.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 400µA,

VQ2001P

bahagian bahagian: 2906

Jenis FET: 4 P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 600mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 1A, 12V, Vgs (th) (Maks) @ Id: 4.5V @ 1mA,

DI9952T

bahagian bahagian: 2661

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A,

SP8M5FU6TB

bahagian bahagian: 3289

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 7A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

IRF7307PBF

bahagian bahagian: 94382

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A, 4.3A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

IRF8915

bahagian bahagian: 2731

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.9A, Rds On (Maks) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

IRF7756TR

bahagian bahagian: 3371

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

IRF7506TR

bahagian bahagian: 2648

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A, Rds On (Maks) @ Id, Vgs: 270 mOhm @ 1.2A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

IRF7328PBF

bahagian bahagian: 58156

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

IRF7756GTRPBF

bahagian bahagian: 2800

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

CTLDM303N-M832DS TR

bahagian bahagian: 191348

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 1.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,