bahagian bahagian: 2913
Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A, Rds On (Maks) @ Id, Vgs: 6.3 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 5.5mA,