Transistor - FET, MOSFET - Susunan

ECH8672-TL-H

bahagian bahagian: 3295

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 1.5A, 4.5V,

FDC6320C

bahagian bahagian: 111333

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, 120mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

MCH6660-TL-H

bahagian bahagian: 2880

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, 1.5A, Rds On (Maks) @ Id, Vgs: 136 mOhm @ 1A, 4.5V,

EMH2407-S-TL-HX

bahagian bahagian: 3321

NTJD4401NT1

bahagian bahagian: 2700

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA, Rds On (Maks) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTJD3158CT2G

bahagian bahagian: 2856

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA, 820mA, Rds On (Maks) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

IRF7751GTRPBF

bahagian bahagian: 2740

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

IRF5810TR

bahagian bahagian: 2641

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

IRF8852TRPBF

bahagian bahagian: 2855

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.8A, Rds On (Maks) @ Id, Vgs: 11.3 mOhm @ 7.8A, 10V, Vgs (th) (Maks) @ Id: 2.35V @ 25µA,

IRF5850

bahagian bahagian: 2724

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.2A, Rds On (Maks) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

SIB914DK-T1-GE3

bahagian bahagian: 2810

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 113 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 800mV @ 250µA,

SI4226DY-T1-E3

bahagian bahagian: 2801

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

SI7270DP-T1-GE3

bahagian bahagian: 139888

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

SI1035X-T1-E3

bahagian bahagian: 2711

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA, 145mA, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 400mV @ 250µA (Min),

SI5902DC-T1-E3

bahagian bahagian: 2714

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

SI6925ADQ-T1-E3

bahagian bahagian: 2762

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.3A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.8V @ 250µA,

SI7945DP-T1-E3

bahagian bahagian: 2759

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 10.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI6967DQ-T1-E3

bahagian bahagian: 2864

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

SIA915DJ-T1-GE3

bahagian bahagian: 188602

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 87 mOhm @ 2.9A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

SI1024X-T1-E3

bahagian bahagian: 3329

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 485mA, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

SI1988DH-T1-E3

bahagian bahagian: 3369

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, Rds On (Maks) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SI5980DU-T1-GE3

bahagian bahagian: 2827

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 567 mOhm @ 400mA, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

SI7946DP-T1-GE3

bahagian bahagian: 2835

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.1A, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 3.3A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

SQ9945AEY-T1-E3

bahagian bahagian: 2873

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 3.7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SIZ920DT-T1-GE3

bahagian bahagian: 87034

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A, Rds On (Maks) @ Id, Vgs: 7.1 mOhm @ 18.9A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

SI5933CDC-T1-E3

bahagian bahagian: 194649

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, Rds On (Maks) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SIA914DJ-T1-GE3

bahagian bahagian: 2803

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

UPA1764G-E2-AZ

bahagian bahagian: 3354

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 3.5A, 10V,

TPC8221-H,LQ(S

bahagian bahagian: 2821

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 100µA,

SSM6N7002BFU(T5L,F

bahagian bahagian: 3306

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 3.1V @ 250µA,

EPC2104ENG

bahagian bahagian: 2913

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A, Rds On (Maks) @ Id, Vgs: 6.3 mOhm @ 20A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 5.5mA,

CSD75205W1015

bahagian bahagian: 2801

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.2A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 850mV @ 250µA,

GWM120-0075P3-SMD

bahagian bahagian: 2805

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 118A, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 60A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

SP8J1TB

bahagian bahagian: 2724

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 42 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

SP8K22FU6TB

bahagian bahagian: 115178

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 45V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

VT6K1T2CR

bahagian bahagian: 166434

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.2V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 100µA,