Transistor - FET, MOSFET - Susunan

DMN2040LSD-13

bahagian bahagian: 2799

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

ZXMD65N02N8TA

bahagian bahagian: 2663

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA (Min),

ZDM4206NTA

bahagian bahagian: 2634

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A, Rds On (Maks) @ Id, Vgs: 1 Ohm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 1mA,

DMN32D2LDF-7

bahagian bahagian: 157687

Jenis FET: 2 N-Channel (Dual) Common Source, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 100mA, 4V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

SI4947ADY-T1-GE3

bahagian bahagian: 2852

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 3.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

SI1913DH-T1-E3

bahagian bahagian: 2766

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 880mA, Rds On (Maks) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 100µA,

SI4276DY-T1-GE3

bahagian bahagian: 2851

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

SI3905DV-T1-GE3

bahagian bahagian: 2849

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

SI4913DY-T1-GE3

bahagian bahagian: 2852

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.1A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 9.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 500µA,

SI3909DV-T1-GE3

bahagian bahagian: 2826

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Rds On (Maks) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V, Vgs (th) (Maks) @ Id: 500mV @ 250µA (Min),

SI4944DY-T1-GE3

bahagian bahagian: 2874

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.3A, Rds On (Maks) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI4933DY-T1-GE3

bahagian bahagian: 2815

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.4A, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 500µA,

SI7909DN-T1-GE3

bahagian bahagian: 2908

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 37 mOhm @ 7.7A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 700µA,

SI7844DP-T1-E3

bahagian bahagian: 3302

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

SI4567DY-T1-GE3

bahagian bahagian: 2812

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, 4.4A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4.1A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

NTTD1P02R2G

bahagian bahagian: 2740

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.45A, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 1.45A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

FDW2601NZ

bahagian bahagian: 2725

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.2A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 8.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDG6314P

bahagian bahagian: 2687

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V,

FDC6322C

bahagian bahagian: 2713

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, 460mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTLGD3502NT1G

bahagian bahagian: 2831

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, 3.6A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

NTLJD2105LTBG

bahagian bahagian: 2816

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NTHD5902T1

bahagian bahagian: 2641

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDZ2553NZ

bahagian bahagian: 2698

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.6A, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 9.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

IRF7104PBF

bahagian bahagian: 100274

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

IRF7328TR

bahagian bahagian: 2700

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

IRF7304PBF

bahagian bahagian: 67896

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

IRF7530TR

bahagian bahagian: 2684

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

IRF7755

bahagian bahagian: 2693

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.9A, Rds On (Maks) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

IRF7350TRPBF

bahagian bahagian: 3331

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.1A, 1.5A, Rds On (Maks) @ Id, Vgs: 210 mOhm @ 2.1A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

IRF7306QTRPBF

bahagian bahagian: 2778

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 1.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

STS3DPF60L

bahagian bahagian: 2674

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

VMM1000-01P

bahagian bahagian: 2737

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1000A, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 800A, 10V, Vgs (th) (Maks) @ Id: 4V @ 10mA,

FMM300-0055P

bahagian bahagian: 2746

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300A, Rds On (Maks) @ Id, Vgs: 3.6 mOhm @ 150A, 10V, Vgs (th) (Maks) @ Id: 4V @ 2mA,

QJD1210SB1

bahagian bahagian: 2931

SP8M8TB

bahagian bahagian: 3276

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 4.5A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

PHKD13N03LT,518

bahagian bahagian: 123779

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.4A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,