Transistor - FET, MOSFET - Susunan

NTHD2102PT1

bahagian bahagian: 2736

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTJD2152PT2

bahagian bahagian: 2687

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 775mA, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDR8305N

bahagian bahagian: 2685

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 4.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTHD5904T1

bahagian bahagian: 3342

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Maks) @ Id: 600mV @ 250µA,

NTJD2152PT1

bahagian bahagian: 3331

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 775mA, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NTMD6N03R2

bahagian bahagian: 2644

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

ECH8659-TL-HX

bahagian bahagian: 2893

NTUD3171PZT5G

bahagian bahagian: 2770

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NTHD5903T1G

bahagian bahagian: 2841

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.2A, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 600mV @ 250µA,

NDS9933

bahagian bahagian: 2913

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 3.2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NTMD2C02R2

bahagian bahagian: 3292

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A, 3.4A, Rds On (Maks) @ Id, Vgs: 43 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

FDY3001NZ

bahagian bahagian: 2778

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDS9933

bahagian bahagian: 2763

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 3.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

MMDF2P02HDR2

bahagian bahagian: 2669

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.3A, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 2A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

SI7214DN-T1-E3

bahagian bahagian: 99156

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 6.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI4532ADY-T1-E3

bahagian bahagian: 139238

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, 3A, Rds On (Maks) @ Id, Vgs: 53 mOhm @ 4.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

SI5513DC-T1-E3

bahagian bahagian: 2794

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, 2.1A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

SI5947DU-T1-E3

bahagian bahagian: 2793

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

SI7909DN-T1-E3

bahagian bahagian: 2903

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 37 mOhm @ 7.7A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 700µA,

SIZ914DT-T1-GE3

bahagian bahagian: 89189

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, 40A, Rds On (Maks) @ Id, Vgs: 6.4 mOhm @ 19A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

SI4834BDY-T1-E3

bahagian bahagian: 2745

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.7A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SIB911DK-T1-E3

bahagian bahagian: 2804

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, Rds On (Maks) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SI7224DN-T1-GE3

bahagian bahagian: 139892

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 6.5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

SMMB911DK-T1-GE3

bahagian bahagian: 2878

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, Rds On (Maks) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SI4913DY-T1-E3

bahagian bahagian: 2758

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.1A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 9.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 500µA,

QJD1210011

bahagian bahagian: 3308

Jenis FET: 2 N-Channel (Dual), Ciri FET: Silicon Carbide (SiC), Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Rds On (Maks) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs (th) (Maks) @ Id: 5V @ 10mA,

MP6M12TCR

bahagian bahagian: 2901

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 42 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

IRF7324PBF

bahagian bahagian: 40730

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 9A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

IRF7313QTRPBF

bahagian bahagian: 2771

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

IRF7103Q

bahagian bahagian: 2957

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

ZXMN6A09DN8TC

bahagian bahagian: 2680

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 8.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

ZXMN3A06DN8TC

bahagian bahagian: 2755

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

UPA2670T1R-E2-AX

bahagian bahagian: 2933

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, 1.8V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 79 mOhm @ 1.5A, 4.5V,

PHKD6N02LT,518

bahagian bahagian: 148309

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.9A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 3A, 5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

LP1030DK1-G

bahagian bahagian: 2955

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 300V, Rds On (Maks) @ Id, Vgs: 180 Ohm @ 20mA, 7V, Vgs (th) (Maks) @ Id: 2.4V @ 1mA,

LN100LA-G

bahagian bahagian: 2875

Jenis FET: 2 N-Channel (Cascoded), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 1200V (1.2kV), Rds On (Maks) @ Id, Vgs: 3000 Ohm @ 2mA, 2.8V, Vgs (th) (Maks) @ Id: 1.6V @ 10µA,