Transistor - FET, MOSFET - Susunan

SP8M70TB1

bahagian bahagian: 89658

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, 2.5A, Rds On (Maks) @ Id, Vgs: 1.63 Ohm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

SI1967DH-T1-E3

bahagian bahagian: 177519

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, Rds On (Maks) @ Id, Vgs: 490 mOhm @ 910mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SI7218DN-T1-E3

bahagian bahagian: 159065

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SQJ914EP-T1_GE3

bahagian bahagian: 2508

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 12 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

SI5948DU-T1-GE3

bahagian bahagian: 153924

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc), Rds On (Maks) @ Id, Vgs: 82 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

SIS990DN-T1-GE3

bahagian bahagian: 178823

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12.1A, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

SI7220DN-T1-E3

bahagian bahagian: 82356

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SQJ946EP-T1_GE3

bahagian bahagian: 173017

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc), Rds On (Maks) @ Id, Vgs: 33 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

SIS903DN-T1-GE3

bahagian bahagian: 2575

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc), Rds On (Maks) @ Id, Vgs: 20.1 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SIA921EDJ-T4-GE3

bahagian bahagian: 178268

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 59 mOhm @ 3.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

NX3008PBKS,115

bahagian bahagian: 177372

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 4.1 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

NX3008CBKS,115

bahagian bahagian: 146141

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 350mA, 200mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

IPG20N06S4L26AATMA1

bahagian bahagian: 186995

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 10µA,

IPG20N10S4L35ATMA1

bahagian bahagian: 169062

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 16µA,

IPG16N10S461AATMA1

bahagian bahagian: 195163

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, Rds On (Maks) @ Id, Vgs: 61 mOhm @ 16A, 10V, Vgs (th) (Maks) @ Id: 3.5V @ 9µA,

IPG20N04S4L08ATMA1

bahagian bahagian: 128418

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 8.2 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 22µA,

IRF7351TRPBF

bahagian bahagian: 111531

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 17.8 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 4V @ 50µA,

IPG20N06S2L35AATMA1

bahagian bahagian: 128569

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Tc), Rds On (Maks) @ Id, Vgs: 35 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2V @ 27µA,

IRF9953TRPBF

bahagian bahagian: 182561

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

IPG20N04S412AATMA1

bahagian bahagian: 165975

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 12.2 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 4V @ 15µA,

EPC2107ENGRT

bahagian bahagian: 82626

Jenis FET: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Ciri FET: GaNFET (Gallium Nitride), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A, 500mA, Rds On (Maks) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V, Vgs (th) (Maks) @ Id: 2.5V @ 100µA, 2.5V @ 20µA,

FDS4935A

bahagian bahagian: 147695

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTMFD4C87NT3G

bahagian bahagian: 32594

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.7A, 14.9A, Rds On (Maks) @ Id, Vgs: 5.4 mOhm @ 30A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

FDS9926A

bahagian bahagian: 151006

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDS9934C

bahagian bahagian: 179792

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, 5A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

ECH8655R-R-TL-H

bahagian bahagian: 144107

NTJD4001NT1G

bahagian bahagian: 105829

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

NTJD4152PT1G

bahagian bahagian: 195187

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 880mA, Rds On (Maks) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

NDS9945

bahagian bahagian: 124416

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5853NLT1G

bahagian bahagian: 113880

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

FW4604-TL-2W

bahagian bahagian: 128054

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 4.5A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 6A, 10V,

DMP58D0SV-7

bahagian bahagian: 194639

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 160mA, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 100mA, 5V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

DMN26D0UDJ-7

bahagian bahagian: 112847

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 240mA, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1.05V @ 250µA,

DMG6602SVTQ-7

bahagian bahagian: 143884

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, 2.8A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 250µA,

SSM6P36FE,LM

bahagian bahagian: 140070

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 330mA, Rds On (Maks) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

SSM6N48FU,LF

bahagian bahagian: 3270

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Rds On (Maks) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,