Transistor - FET, MOSFET - Susunan

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Transistor - FET, MOSFET - Susunan

Infineon Technologies

IRF7509TRPBF

bahagian bahagian: 158332

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, 2A, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 1.7A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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IPG20N06S4L14AATMA1

Infineon Technologies

IPG20N06S4L14AATMA1

bahagian bahagian: 125877

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 13.7 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 20µA,

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IPG20N04S4L08AATMA1

Infineon Technologies

IPG20N04S4L08AATMA1

bahagian bahagian: 137972

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 8.2 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 22µA,

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IPG20N06S415ATMA2

Infineon Technologies

IPG20N06S415ATMA2

bahagian bahagian: 113173

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 15.5 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 4V @ 20µA,

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IPG20N04S4L11ATMA1

Infineon Technologies

IPG20N04S4L11ATMA1

bahagian bahagian: 172926

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 11.6 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 15µA,

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Infineon Technologies

IRF7341GTRPBF

bahagian bahagian: 82222

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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IPG20N04S4L07ATMA1

Infineon Technologies

IPG20N04S4L07ATMA1

bahagian bahagian: 104521

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 7.2 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 30µA,

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Infineon Technologies

IRF7314TRPBF

bahagian bahagian: 193267

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

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Infineon Technologies

IRF7504TRPBF

bahagian bahagian: 176860

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A, Rds On (Maks) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

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Infineon Technologies

IRF7304TRPBF

bahagian bahagian: 196744

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

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IPG20N06S415AATMA1

Infineon Technologies

IPG20N06S415AATMA1

bahagian bahagian: 108935

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 15.5 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 4V @ 20µA,

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Infineon Technologies

IRFH7911TRPBF

bahagian bahagian: 61001

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 28A, Rds On (Maks) @ Id, Vgs: 8.6 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 2.35V @ 25µA,

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Infineon Technologies

IRF7530TRPBF

bahagian bahagian: 169065

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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Infineon Technologies

IRF9956TRPBF

bahagian bahagian: 162504

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Infineon Technologies

IRF7301TRPBF

bahagian bahagian: 199318

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

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Infineon Technologies

IRF3575DTRPBF

bahagian bahagian: 34855

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 303A (Tc),

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Infineon Technologies

IRF7324TRPBF

bahagian bahagian: 97929

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 9A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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IPG20N06S2L35ATMA1

Infineon Technologies

IPG20N06S2L35ATMA1

bahagian bahagian: 145368

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2V @ 27µA,

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Infineon Technologies

IRF7103TRPBF

bahagian bahagian: 149977

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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IPG20N06S2L50ATMA1

Infineon Technologies

IPG20N06S2L50ATMA1

bahagian bahagian: 152225

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2V @ 19µA,

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Infineon Technologies

IRF7317TRPBF

bahagian bahagian: 158547

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.6A, 5.3A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 250µA,

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Infineon Technologies

IRFHS9351TRPBF

bahagian bahagian: 112687

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 170 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 10µA,

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Infineon Technologies

IRF7910TRPBF

bahagian bahagian: 127888

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 8A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Infineon Technologies

IRL6297SDTRPBF

bahagian bahagian: 142257

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, Rds On (Maks) @ Id, Vgs: 4.9 mOhm @ 15A, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 35µA,

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