Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 15

SIDC07D60AF6X1SA1

bahagian bahagian: 504

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 22.5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 22.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Infineon Technologies

SIDC42D170E6X1SA2

bahagian bahagian: 549

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1700V, Semasa - Rata-rata Disahkan (Io): 50A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.15V @ 50A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

SIDC46D170HX1SA2

bahagian bahagian: 548

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1700V, Semasa - Rata-rata Disahkan (Io): 75A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 75A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

SIDC04D60F6X1SA3

bahagian bahagian: 504

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 9A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 9A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Infineon Technologies

SIDC23D60E6X1SA4

bahagian bahagian: 484

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 50A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 50A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

SIDC03D60C6X1SA2

bahagian bahagian: 552

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.95V @ 10A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

SIDC53D120H6X1SA3

bahagian bahagian: 476

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 100A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

SIDC20D60C6

bahagian bahagian: 567

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 75A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 75A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

SIDC14D60F6X1SA2

bahagian bahagian: 533

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 45A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 45A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Infineon Technologies

SDT08S60

bahagian bahagian: 502

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 8A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Infineon Technologies

SDD04S60

bahagian bahagian: 556

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 4A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Infineon Technologies

SDB06S60

bahagian bahagian: 477

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Infineon Technologies

SIDC14D120F6X1SA3

bahagian bahagian: 565

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 15A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.1V @ 15A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

SIDC161D170HX1SA2

bahagian bahagian: 473

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1700V, Semasa - Rata-rata Disahkan (Io): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 300A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

IDH12S60CAKSA1

bahagian bahagian: 542

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 12A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 12A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Infineon Technologies

SIDC14D60E6YX1SA1

bahagian bahagian: 550

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 30A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 30A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

MMBD914LT3HTMA1

bahagian bahagian: 5105

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4ns,

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Infineon Technologies

SIDC02D60C6X1SA4

bahagian bahagian: 474

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.95V @ 6A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

SIDC01D60C6

bahagian bahagian: 468

Jenis Diod: Standard, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

SIDC01D120H6

bahagian bahagian: 5086

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 600mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 600mA, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

SIDC81D120E6X1SA4

bahagian bahagian: 506

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 100A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

SDT05S60

bahagian bahagian: 494

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 5A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Infineon Technologies

SIDC30D120F6X1SA2

bahagian bahagian: 491

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 35A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.1V @ 35A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

SIDC08D120F6X1SA3

bahagian bahagian: 502

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 7A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.1V @ 7A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

SIDC81D120H6X1SA2

bahagian bahagian: 5071

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 150A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

SIDC03D60F6X1SA2

bahagian bahagian: 474

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 6A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Infineon Technologies

IDH16S60CAKSA1

bahagian bahagian: 466

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 16A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 16A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Infineon Technologies

SIDC14D60E6X1SA1

bahagian bahagian: 5128

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 30A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 30A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

SIDC56D120F6X1SA1

bahagian bahagian: 552

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 75A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.1V @ 75A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

SIDC56D60E6X1SA1

bahagian bahagian: 541

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 150A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Infineon Technologies

SIDC11D60SIC3

bahagian bahagian: 494

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 4A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Infineon Technologies

SDT10S60

bahagian bahagian: 5047

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Infineon Technologies

SDT10S30

bahagian bahagian: 246

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Infineon Technologies

SDT12S60

bahagian bahagian: 204

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 12A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 12A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Infineon Technologies

SDT04S60

bahagian bahagian: 197

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 4A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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Infineon Technologies

SDT06S60

bahagian bahagian: 227

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

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