Transistor - FET, MOSFET - Susunan

FDD8426H

bahagian bahagian: 2797

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 10A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

MMDF3N04HDR2G

bahagian bahagian: 2776

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDS6892AZ

bahagian bahagian: 2717

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDS3601

bahagian bahagian: 2704

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, Rds On (Maks) @ Id, Vgs: 480 mOhm @ 1.3A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

FDG6301N_D87Z

bahagian bahagian: 3287

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTJD4401NT4G

bahagian bahagian: 2719

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA, Rds On (Maks) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDG6303N_D87Z

bahagian bahagian: 2711

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NDS9957

bahagian bahagian: 3327

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 2.6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDS6982S

bahagian bahagian: 2774

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.3A, 8.6A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 6.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMS3600S

bahagian bahagian: 63274

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A, 30A, Rds On (Maks) @ Id, Vgs: 5.6 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

FW216A-TL-2W

bahagian bahagian: 153552

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 35V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 64 mOhm @ 4.5A, 10V,

ECH8601M-TL-H

bahagian bahagian: 2899

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Ta), Rds On (Maks) @ Id, Vgs: 23 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

HUFA76413DK8T

bahagian bahagian: 2732

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A, Rds On (Maks) @ Id, Vgs: 49 mOhm @ 5.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTMD2C02R2G

bahagian bahagian: 2750

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A, 3.4A, Rds On (Maks) @ Id, Vgs: 43 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

NVDD5894NLT4G

bahagian bahagian: 89660

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 50A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

NVMFD5853NWFT1G

bahagian bahagian: 90403

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

NTHD4401PT1

bahagian bahagian: 2644

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.1A, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

FDZ2553N

bahagian bahagian: 2739

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.6A, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 9.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDS9933BZ

bahagian bahagian: 5427

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A, Rds On (Maks) @ Id, Vgs: 46 mOhm @ 4.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDW9926A

bahagian bahagian: 2756

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 4.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

VEC2415-TL-E

bahagian bahagian: 3310

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 1mA,

FDPC8011S

bahagian bahagian: 43392

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 27A, Rds On (Maks) @ Id, Vgs: 6 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

NTJD4105CT4

bahagian bahagian: 2730

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA, 775mA, Rds On (Maks) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDW2516NZ

bahagian bahagian: 2695

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 5.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NDS8961

bahagian bahagian: 2685

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTLJD2104PTBG

bahagian bahagian: 2768

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.4A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 800mV @ 250µA,

ECH8660-S-TL-H

bahagian bahagian: 2959

FDS6982

bahagian bahagian: 2700

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.3A, 8.6A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 6.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

ECH8659-TL-H

bahagian bahagian: 2892

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 3.5A, 10V,

FDQ7236AS

bahagian bahagian: 2900

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A, 11A, Rds On (Maks) @ Id, Vgs: 8.7 mOhm @ 14A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SSD2025TF

bahagian bahagian: 2716

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.3A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 3.3A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

MMDF2C03HDR2

bahagian bahagian: 2708

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A, 3A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

HUFA76404DK8T

bahagian bahagian: 2700

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 62V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 3.6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NDH8304P

bahagian bahagian: 2758

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 2.7A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

MCH6604-TL-E

bahagian bahagian: 142874

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA, Rds On (Maks) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V,

NTJD1155LT1

bahagian bahagian: 2754

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, Rds On (Maks) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,