Transistor - FET, MOSFET - Susunan

FDY2001PZ

bahagian bahagian: 2782

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150mA, Rds On (Maks) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTJD4401NT2G

bahagian bahagian: 2745

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA, Rds On (Maks) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDC6000NZ

bahagian bahagian: 2733

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.3A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTLJD4150PTBG

bahagian bahagian: 2781

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.8A, Rds On (Maks) @ Id, Vgs: 135 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

FDG6322C_D87Z

bahagian bahagian: 2704

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, 410mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTL4502NT1

bahagian bahagian: 2702

Jenis FET: 4 N-Channel (H-Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.4A, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

ECH8601M-C-TL-H

bahagian bahagian: 2940

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 4A, 4.5V,

NTJD4152PT1

bahagian bahagian: 2693

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 880mA, Rds On (Maks) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

NDS9936

bahagian bahagian: 2706

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

EFC6601R-A-TR

bahagian bahagian: 185411

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive,

NDS9959

bahagian bahagian: 2628

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

NTGD3149CT1G

bahagian bahagian: 2762

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A, 2.4A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 3.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDMJ1023PZ

bahagian bahagian: 2762

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 112 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

SI9955DY

bahagian bahagian: 2721

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FW907-TL-E

bahagian bahagian: 2854

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, 8A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 10A, 10V,

NTJD4001NT2G

bahagian bahagian: 2721

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

NTHD4502NT1

bahagian bahagian: 2711

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.2A, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDR8508P

bahagian bahagian: 2666

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 52 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FW707-TL-E

bahagian bahagian: 2866

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 8A, 10V,

FDW2510NZ

bahagian bahagian: 2700

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 6.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDS8333C

bahagian bahagian: 2682

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.1A, 3.4A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 4.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDM3300NZ

bahagian bahagian: 2686

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 10A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDC6000NZ_F077

bahagian bahagian: 2747

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.3A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

ECH8602M-TL-H

bahagian bahagian: 2823

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 3A, 4.5V,

EMH2409-TL-H

bahagian bahagian: 2859

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 59 mOhm @ 2A, 10V,

NTND31015NZTAG

bahagian bahagian: 120579

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NDS9958

bahagian bahagian: 2715

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

EMH2308-TL-H

bahagian bahagian: 186625

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, 1.8V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 3A, 4.5V,

NDS9933A

bahagian bahagian: 2707

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.8A, Rds On (Maks) @ Id, Vgs: 140 mOhm @ 2.8A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDS6894AZ

bahagian bahagian: 2716

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 8A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDS4559-F085

bahagian bahagian: 5411

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, 3.5A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDW2520C

bahagian bahagian: 2720

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 4.4A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FD6M043N08

bahagian bahagian: 2778

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 65A, Rds On (Maks) @ Id, Vgs: 4.3 mOhm @ 40A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

MCH6605-TL-E

bahagian bahagian: 2963

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 140mA, Rds On (Maks) @ Id, Vgs: 22 Ohm @ 40mA, 10V,

ECH8654-TL-HQ

bahagian bahagian: 2956

FDMC3300NZA

bahagian bahagian: 2769

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 8A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,