Transistor - FET, MOSFET - Susunan

NTHD5902T1

bahagian bahagian: 2641

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDZ2553NZ

bahagian bahagian: 2698

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.6A, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 9.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTHD2102PT1

bahagian bahagian: 2736

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTJD2152PT2

bahagian bahagian: 2687

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 775mA, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDR8305N

bahagian bahagian: 2685

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 4.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTHD5904T1

bahagian bahagian: 3342

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Maks) @ Id: 600mV @ 250µA,

NTJD2152PT1

bahagian bahagian: 3331

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 775mA, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NTMD6N03R2

bahagian bahagian: 2644

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

ECH8659-TL-HX

bahagian bahagian: 2893

NTUD3171PZT5G

bahagian bahagian: 2770

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NTHD5903T1G

bahagian bahagian: 2841

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.2A, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 600mV @ 250µA,

NDS9933

bahagian bahagian: 2913

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 3.2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NTMD2C02R2

bahagian bahagian: 3292

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A, 3.4A, Rds On (Maks) @ Id, Vgs: 43 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

FDY3001NZ

bahagian bahagian: 2778

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDS9933

bahagian bahagian: 2763

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 3.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

MMDF2P02HDR2

bahagian bahagian: 2669

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.3A, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 2A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

ECH8672-TL-H

bahagian bahagian: 3295

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 1.5A, 4.5V,

FDC6320C

bahagian bahagian: 111333

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, 120mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

MCH6660-TL-H

bahagian bahagian: 2880

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, 1.5A, Rds On (Maks) @ Id, Vgs: 136 mOhm @ 1A, 4.5V,

EMH2407-S-TL-HX

bahagian bahagian: 3321

NTJD4401NT1

bahagian bahagian: 2700

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA, Rds On (Maks) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTJD3158CT2G

bahagian bahagian: 2856

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA, 820mA, Rds On (Maks) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDS4935A

bahagian bahagian: 147695

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTMFD4C87NT3G

bahagian bahagian: 32594

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.7A, 14.9A, Rds On (Maks) @ Id, Vgs: 5.4 mOhm @ 30A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

FDS9926A

bahagian bahagian: 151006

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDS9934C

bahagian bahagian: 179792

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, 5A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

ECH8655R-R-TL-H

bahagian bahagian: 144107

NTJD4001NT1G

bahagian bahagian: 105829

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

NTJD4152PT1G

bahagian bahagian: 195187

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 880mA, Rds On (Maks) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

NDS9945

bahagian bahagian: 124416

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5853NLT1G

bahagian bahagian: 113880

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

FW4604-TL-2W

bahagian bahagian: 128054

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 4.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 4.5A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 6A, 10V,

CPH6635-TL-H

bahagian bahagian: 124851

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA, 1.5A, Rds On (Maks) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V,

FDS8958A-F085

bahagian bahagian: 21554

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, 5A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5875NLT3G

bahagian bahagian: 175639

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NVMFD5873NLT1G

bahagian bahagian: 73807

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,