Transistor - FET, MOSFET - Susunan

MCH6602-TL-E

bahagian bahagian: 191190

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 350mA, Rds On (Maks) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V,

FDS6898A_NF40

bahagian bahagian: 2814

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.4A, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NDS8852H

bahagian bahagian: 2661

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, 3.4A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

FW811-TL-E

bahagian bahagian: 3294

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 35V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 1mA,

VEC2616-TL-W-Z

bahagian bahagian: 199667

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, 2.5A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 1mA,

NTHD3100CT3G

bahagian bahagian: 2772

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, 3.2A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

NTZD3156CT2G

bahagian bahagian: 2761

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 540mA, 430mA, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDW2507N

bahagian bahagian: 2689

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 7.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDW2501N

bahagian bahagian: 2746

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDW2508PB

bahagian bahagian: 2726

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDZ2554PZ

bahagian bahagian: 2723

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NDS8858H

bahagian bahagian: 2706

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.3A, 4.8A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 4.8A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

NTZD3156CT5G

bahagian bahagian: 2782

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 540mA, 430mA, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NVMFD5875NLWFT3G

bahagian bahagian: 166888

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMS3604AS

bahagian bahagian: 3375

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 23A, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

NTJD2152PT2G

bahagian bahagian: 2773

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 775mA, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

EFC6602R-A-TR

bahagian bahagian: 185435

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive,

FDS3912

bahagian bahagian: 2754

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

EFC6617R-A-TF

bahagian bahagian: 135371

NTHD4401PT1G

bahagian bahagian: 2836

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.1A, Rds On (Maks) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

NDS9953A

bahagian bahagian: 2676

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 1A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

FDS3812

bahagian bahagian: 2733

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 74 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

FDG6320C_D87Z

bahagian bahagian: 2690

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, 140mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

ECH8651R-R-TL-H

bahagian bahagian: 2871

FDJ1028N

bahagian bahagian: 2716

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDMA1029PZ

bahagian bahagian: 178279

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, Rds On (Maks) @ Id, Vgs: 95 mOhm @ 3.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDC6036P_F077

bahagian bahagian: 2788

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 44 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDS6812A

bahagian bahagian: 2711

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.7A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 6.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDG6302P

bahagian bahagian: 2666

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 140mA, Rds On (Maks) @ Id, Vgs: 10 Ohm @ 140mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTQD4154ZR2

bahagian bahagian: 2660

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 7.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTTD1P02R2

bahagian bahagian: 2729

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.45A, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 1.45A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

NTJD4105CT2

bahagian bahagian: 2725

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA, 775mA, Rds On (Maks) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FW813-TL-H

bahagian bahagian: 2907

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 49 mOhm @ 5A, 10V,

MMDF1N05ER2

bahagian bahagian: 2640

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTJD2152PT4G

bahagian bahagian: 2775

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 775mA, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NTLJD3119CTAG

bahagian bahagian: 2878

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, 2.3A, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,