Transistor - FET, MOSFET - Susunan

NVMFD5C470NLWFT1G

bahagian bahagian: 277

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), 36A (Tc), Rds On (Maks) @ Id, Vgs: 11.5 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 20µA,

FDMS3660S

bahagian bahagian: 144159

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 30A, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

FDMD8440L

bahagian bahagian: 9941

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21A (Ta), 87A (Tc), Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 21A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMS3686S

bahagian bahagian: 98643

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 23A, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

SQJ500EPTR

bahagian bahagian: 2970

VEC2616-TL-H-Z-W

bahagian bahagian: 9922

NTMFD4902NFT3G

bahagian bahagian: 98047

Jenis FET: 2 N-Channel (Dual), Schottky, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.3A, 13.3A, Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

SSD2007ATF

bahagian bahagian: 2977

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

MMDF2P02HDR2G

bahagian bahagian: 2922

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.3A, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 2A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

FDS3992

bahagian bahagian: 87571

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 62 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

NTLUD3A260PZTBG

bahagian bahagian: 162644

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A, Rds On (Maks) @ Id, Vgs: 200 mOhm @ 2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDPC3D5N025X9D

bahagian bahagian: 97245

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 74A, Rds On (Maks) @ Id, Vgs: 3.01 mOhm @ 18A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDS8949

bahagian bahagian: 64827

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

ECH8655R-TL-H

bahagian bahagian: 174892

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 4.5A, 4.5V,

NDS8958

bahagian bahagian: 2659

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, 4A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 5.3A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

NTHD3100CT3

bahagian bahagian: 2692

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, 3.2A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

FDY4001CZ

bahagian bahagian: 2688

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, 150mA, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTMD6P02R2SG

bahagian bahagian: 2763

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

MMDF3N04HDR2

bahagian bahagian: 2667

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDMS3660S-F121

bahagian bahagian: 2953

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 30A, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

NTMD2P01R2G

bahagian bahagian: 2669

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 16V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

VEC2616-TL-H-Z

bahagian bahagian: 2971

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, 2.5A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 1.5A, 10V,

FDMC8200S_F106

bahagian bahagian: 3352

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 8.5A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FW812-TL-E

bahagian bahagian: 2832

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 35V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 1mA,

NTLUD3191PZTBG

bahagian bahagian: 2826

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.1A, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDS8962C

bahagian bahagian: 2774

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, 5A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTMC1300R2

bahagian bahagian: 3306

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.2A, 1.8A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

FDW9926NZ

bahagian bahagian: 2770

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 4.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDR8308P

bahagian bahagian: 2748

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 3.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

EMH2407-TL-H

bahagian bahagian: 165186

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 3A, 4.5V,

ECH8619-TL-E

bahagian bahagian: 2845

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, 2A, Rds On (Maks) @ Id, Vgs: 93 mOhm @ 1.5A, 10V,

FDZ2554P

bahagian bahagian: 2769

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDW2501NZ

bahagian bahagian: 2739

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 5.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDJ1032C

bahagian bahagian: 2679

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A, 2.8A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTQD6968R2

bahagian bahagian: 2684

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.6A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 6.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

FDW2512NZ

bahagian bahagian: 2739

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 6A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,