Transistor - FET, MOSFET - Susunan

NTND31225CZTAG

bahagian bahagian: 21663

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA (Ta), 127mA (Ta), Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V, 5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FW282-TL-E

bahagian bahagian: 2908

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 35V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 37 mOhm @ 6A, 10V,

VEC2616-TL-H

bahagian bahagian: 2969

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, 2.5A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 2.6V @ 1mA,

FDMS3616S

bahagian bahagian: 2851

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, 18A, Rds On (Maks) @ Id, Vgs: 6.6 mOhm @ 16A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

FDW2507NZ

bahagian bahagian: 2692

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 7.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTQD6968NR2G

bahagian bahagian: 2683

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

NDS9925A

bahagian bahagian: 2695

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NTZD3154NT1H

bahagian bahagian: 188943

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 540mA, Rds On (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

ECH8675-TL-H

bahagian bahagian: 2918

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 46 mOhm @ 3A, 4.5V,

FDS6984S

bahagian bahagian: 2757

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, 8.5A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 8.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NDS9942

bahagian bahagian: 2712

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, 2.5A, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 1A, 10V,

NTMD2P01R2

bahagian bahagian: 2666

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 16V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDJ1027P

bahagian bahagian: 2758

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.8A, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 2.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NDS9956A

bahagian bahagian: 2657

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

NTHD5905T1

bahagian bahagian: 2720

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA,

MMDF2N02ER2

bahagian bahagian: 2712

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NDM3000

bahagian bahagian: 2702

Jenis FET: 3 N and 3 P-Channel (3-Phase Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NDS8926

bahagian bahagian: 2667

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 5.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

EMH2407-S-TL-H

bahagian bahagian: 2884

NTND3184NZTAG

bahagian bahagian: 107176

Jenis FET: 2 N-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA (Ta), Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FW344A-TL-2W

bahagian bahagian: 2933

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, 3.5A, Rds On (Maks) @ Id, Vgs: 64 mOhm @ 4.5A, 10V,

CPH5617-TL-E

bahagian bahagian: 186363

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150mA, Rds On (Maks) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V,

FDW2503N

bahagian bahagian: 2761

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 5.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDW2506P

bahagian bahagian: 2777

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 5.3A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

MMDF2P02ER2G

bahagian bahagian: 2699

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NDS8947

bahagian bahagian: 3294

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

NTZD3152PT1H

bahagian bahagian: 106213

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 430mA, Rds On (Maks) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

NTGD4161PT1G

bahagian bahagian: 2811

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 2.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FDC6020C

bahagian bahagian: 2737

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.9A, 4.2A, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTMD5836NLR2G

bahagian bahagian: 2882

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, 5.7A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

NTTD1P02R2G

bahagian bahagian: 2740

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.45A, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 1.45A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

FDW2601NZ

bahagian bahagian: 2725

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.2A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 8.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDG6314P

bahagian bahagian: 2687

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V,

FDC6322C

bahagian bahagian: 2713

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, 460mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NTLGD3502NT1G

bahagian bahagian: 2831

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, 3.6A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

NTLJD2105LTBG

bahagian bahagian: 2816

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,