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Transistor - FET, MOSFET - Susunan

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  • Transistor - FET, MOSFET - Susunan
NTHD3102CT1G
ON Semiconductor

NTHD3102CT1G

bahagian bahagian: 118797

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, 3.1A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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FDC3601N
ON Semiconductor

FDC3601N

bahagian bahagian: 102462

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A, Rds On (Maks) @ Id, Vgs: 500 mOhm @ 1A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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FDG6301N-F085
ON Semiconductor

FDG6301N-F085

bahagian bahagian: 2507

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 220mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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NVMFD5485NLWFT3G
ON Semiconductor

NVMFD5485NLWFT3G

bahagian bahagian: 90689

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 44 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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NVLJD4007NZTAG
ON Semiconductor

NVLJD4007NZTAG

bahagian bahagian: 139596

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 245mA, Rds On (Maks) @ Id, Vgs: 7 Ohm @ 125mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

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EFC6605R-TR
ON Semiconductor

EFC6605R-TR

bahagian bahagian: 197820

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 2.5V Drive,

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NTMFD4C88NT3G
ON Semiconductor

NTMFD4C88NT3G

bahagian bahagian: 40053

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.7A, 14.2A, Rds On (Maks) @ Id, Vgs: 5.4 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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NVMFD5483NLT3G
ON Semiconductor

NVMFD5483NLT3G

bahagian bahagian: 73044

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.4A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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MCH6663-TL-H
ON Semiconductor

MCH6663-TL-H

bahagian bahagian: 186117

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.8A, 1.5A, Rds On (Maks) @ Id, Vgs: 188 mOhm @ 900mA, 10V,

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FDMA1024NZ
ON Semiconductor

FDMA1024NZ

bahagian bahagian: 167329

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 54 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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CPH6636R-TL-W
ON Semiconductor

CPH6636R-TL-W

bahagian bahagian: 161568

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 3A, 4.5V,

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FDS89161LZ
ON Semiconductor

FDS89161LZ

bahagian bahagian: 125136

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 2.7A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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NTLGD3502NT2G
ON Semiconductor

NTLGD3502NT2G

bahagian bahagian: 150994

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, 3.6A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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FDMS3624S
ON Semiconductor

FDMS3624S

bahagian bahagian: 88033

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17.5A, 30A, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 17.5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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FDS89161
ON Semiconductor

FDS89161

bahagian bahagian: 125135

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 2.7A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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FDG1024NZ
ON Semiconductor

FDG1024NZ

bahagian bahagian: 171322

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.2A, Rds On (Maks) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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NTMD4N03R2G
ON Semiconductor

NTMD4N03R2G

bahagian bahagian: 117636

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDS6911
ON Semiconductor

FDS6911

bahagian bahagian: 99941

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDMD8630
ON Semiconductor

FDMD8630

bahagian bahagian: 2633

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 38A (Ta), 167A (Tc), Rds On (Maks) @ Id, Vgs: 1 mOhm @ 38A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDS6975
ON Semiconductor

FDS6975

bahagian bahagian: 115211

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDS4897C
ON Semiconductor

FDS4897C

bahagian bahagian: 170499

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.2A, 4.4A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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MCH6660-TL-W
ON Semiconductor

MCH6660-TL-W

bahagian bahagian: 167591

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 1.8V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, 1.5A, Rds On (Maks) @ Id, Vgs: 136 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

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NTHD4102PT1G
ON Semiconductor

NTHD4102PT1G

bahagian bahagian: 108053

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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FDMB3800N
ON Semiconductor

FDMB3800N

bahagian bahagian: 191355

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDS6890A
ON Semiconductor

FDS6890A

bahagian bahagian: 101115

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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FDY1002PZ
ON Semiconductor

FDY1002PZ

bahagian bahagian: 182634

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 830mA, Rds On (Maks) @ Id, Vgs: 500 mOhm @ 830mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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FDMA1032CZ
ON Semiconductor

FDMA1032CZ

bahagian bahagian: 89328

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, 3.1A, Rds On (Maks) @ Id, Vgs: 68 mOhm @ 3.7A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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FDME1034CZT
ON Semiconductor

FDME1034CZT

bahagian bahagian: 154682

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.8A, 2.6A, Rds On (Maks) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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FDY3000NZ
ON Semiconductor

FDY3000NZ

bahagian bahagian: 111326

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 600mA, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 1.3V @ 250µA,

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