Dioda - Penyearah - Susunan | Produk Semikonduktor Diskrit | 2

BAV70,LM

bahagian bahagian: 3367

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 215mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

BAV99W,LF

bahagian bahagian: 3300

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

BAV99,LM

bahagian bahagian: 3315

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 215mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

HN2S02JE(TE85L,F)

bahagian bahagian: 151

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

HN2S01FUTE85LF

bahagian bahagian: 111

Konfigurasi Diod: 3 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 10V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

HN1D02F(TE85L,F)

bahagian bahagian: 99

Konfigurasi Diod: 2 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

HN1D01F(TE85L,F)

bahagian bahagian: 125

Konfigurasi Diod: 2 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

TBAV99,LM

bahagian bahagian: 196401

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 150mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

TRS12N65D,S1F

bahagian bahagian: 12490

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 6A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

HN2D01FTE85LF

bahagian bahagian: 146

Konfigurasi Diod: 3 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 80mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

TRS16N65D,S1F

bahagian bahagian: 10959

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

HN2D01JE(TE85L,F)

bahagian bahagian: 109

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

TBAT54C,LM

bahagian bahagian: 106201

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 140mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

HN1D03FTE85LF

bahagian bahagian: 105421

Konfigurasi Diod: 2 Pair CA + CC, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

HN1D03FU,LF

bahagian bahagian: 159197

Konfigurasi Diod: 2 Pair CA + CC, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 80mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

TBAV70,LM

bahagian bahagian: 171499

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 215mA, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

TRS24N65D,S1F

bahagian bahagian: 8001

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 12A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

TRS20N65D,S1F

bahagian bahagian: 7444

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

HN1D01FE(TE85L,F)

bahagian bahagian: 191091

Konfigurasi Diod: 2 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

HN2S03FUTE85LF

bahagian bahagian: 124987

Konfigurasi Diod: 3 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 50mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

HN1D04FUTE85LF

bahagian bahagian: 130979

Konfigurasi Diod: 2 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

HN1D02FU(T5L,F,T)

bahagian bahagian: 4548

Konfigurasi Diod: 2 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

HN2D01FU(TE85L,F)

bahagian bahagian: 166431

Konfigurasi Diod: 3 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 80mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

HN2D03F(TE85L,F)

bahagian bahagian: 170816

Konfigurasi Diod: 3 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

CVJ10F30,LF

bahagian bahagian: 16260

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 570mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

HN1D02FU,LF

bahagian bahagian: 191404

Konfigurasi Diod: 2 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

TBAW56,LM

bahagian bahagian: 127689

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 215mA, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

HN2S03T(TE85L)

bahagian bahagian: 4160

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 50mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

HN2S03FE(TE85L,F)

bahagian bahagian: 4087

Konfigurasi Diod: 3 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 50mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

U20DL2C48A(TE24L,Q

bahagian bahagian: 3899

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 980mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

TBAT54A,LM

bahagian bahagian: 120020

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

TBAT54S,LM

bahagian bahagian: 167920

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 100mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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