Transistor - Bipolar (BJT) - Susunan, Pra-Bias | Produk Semikonduktor Diskrit | 6

RN2608(TE85L,F)

bahagian bahagian: 98

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2605(TE85L,F)

bahagian bahagian: 173

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1901FETE85LF

bahagian bahagian: 106

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN4602TE85LF

bahagian bahagian: 138

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1511(TE85L,F)

bahagian bahagian: 136

Jenis Transistor: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN2963(TE85L,F)

bahagian bahagian: 77

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1610(TE85L,F)

bahagian bahagian: 111

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN1964TE85LF

bahagian bahagian: 84

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2703JE(TE85L,F)

bahagian bahagian: 92

Jenis Transistor: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN4603(TE85L,F)

bahagian bahagian: 170

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1905,LF(CT

bahagian bahagian: 103003

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2903,LF(CT

bahagian bahagian: 185995

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN4609(TE85L,F)

bahagian bahagian: 95

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2965(TE85L,F)

bahagian bahagian: 100

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1502(TE85L,F)

bahagian bahagian: 162

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2505TE85LF

bahagian bahagian: 95

Jenis Transistor: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2911FE(TE85L,F)

bahagian bahagian: 89

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN4907,LF

bahagian bahagian: 195313

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN4607(TE85L,F)

bahagian bahagian: 95

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN4901,LF(CT

bahagian bahagian: 185851

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN4905,LF(CT

bahagian bahagian: 115

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2610(TE85L,F)

bahagian bahagian: 94

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN1703JE(TE85L,F)

bahagian bahagian: 155

Jenis Transistor: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2708JE(TE85L,F)

bahagian bahagian: 101

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1601(TE85L,F)

bahagian bahagian: 91

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1902,LF(CT

bahagian bahagian: 160819

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2707JE(TE85L,F)

bahagian bahagian: 113

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2602(TE85L,F)

bahagian bahagian: 105554

Jenis Transistor: 2 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1604(TE85L,F)

bahagian bahagian: 90

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1706JE(TE85L,F)

bahagian bahagian: 128509

Jenis Transistor: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1608(TE85L,F)

bahagian bahagian: 103

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN4910,LF

bahagian bahagian: 104942

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN1503(TE85L,F)

bahagian bahagian: 1865

Jenis Transistor: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1910FE,LF(CT

bahagian bahagian: 119363

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN4989(T5L,F,T)

bahagian bahagian: 1626

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN4906,LF

bahagian bahagian: 1441

Jenis Transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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