Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 2

TPCF8402(TE85L,F,M

bahagian bahagian: 2735

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, 3.2A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 2A, 10V, Vgs (th) (Maks) @ Id: 2V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6L09FUTE85LF

bahagian bahagian: 24307

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA, 200mA, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 200MA, 10V, Vgs (th) (Maks) @ Id: 1.8V @ 100µA,

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Toshiba Semiconductor and Storage

TPCL4201(TE85L,F)

bahagian bahagian: 2892

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Vgs (th) (Maks) @ Id: 1.2V @ 200µA,

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Toshiba Semiconductor and Storage

TPC8207(TE12L,Q)

bahagian bahagian: 2742

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 4.8A, 4V, Vgs (th) (Maks) @ Id: 1.2V @ 200µA,

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Toshiba Semiconductor and Storage

SSM6L11TU(TE85L,F)

bahagian bahagian: 2856

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, Rds On (Maks) @ Id, Vgs: 145 mOhm @ 250MA, 4V, Vgs (th) (Maks) @ Id: 1.1V @ 100µA,

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Toshiba Semiconductor and Storage

TPCL4203(TE85L,F)

bahagian bahagian: 3305

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Vgs (th) (Maks) @ Id: 1.2V @ 200µA,

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Toshiba Semiconductor and Storage

TPC8221-H,LQ(S

bahagian bahagian: 2821

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 3A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6N7002BFU(T5L,F

bahagian bahagian: 3306

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 3.1V @ 250µA,

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Toshiba Semiconductor and Storage

SSM6P36FE,LM

bahagian bahagian: 140070

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 330mA, Rds On (Maks) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N48FU,LF

bahagian bahagian: 3270

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Rds On (Maks) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6N39TU,LF

bahagian bahagian: 2461

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.6A (Ta), Rds On (Maks) @ Id, Vgs: 119 mOhm @ 1A, 4V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N35FE,LM

bahagian bahagian: 102707

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N7002KFU,LF

bahagian bahagian: 124781

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300mA, Rds On (Maks) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

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Toshiba Semiconductor and Storage

SSM6N43FU,LF

bahagian bahagian: 176574

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, Rds On (Maks) @ Id, Vgs: 630 mOhm @ 200mA, 5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6L12TU,LF

bahagian bahagian: 2495

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Ta), Rds On (Maks) @ Id, Vgs: 145 mOhm @ 500mA, 4.5V, 260 mOhm @ 250mA, 4V, Vgs (th) (Maks) @ Id: 1.1V @ 100µA,

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Toshiba Semiconductor and Storage

TPC8408,LQ(S

bahagian bahagian: 128587

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.1A, 5.3A, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6N36FE,LM

bahagian bahagian: 161424

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, Rds On (Maks) @ Id, Vgs: 630 mOhm @ 200mA, 5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N56FE,LM

bahagian bahagian: 179879

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 800mA, Rds On (Maks) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N15AFE,LM

bahagian bahagian: 178067

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6N15AFU,LF

bahagian bahagian: 175270

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6N58NU,LF

bahagian bahagian: 111011

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.8V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 84 mOhm @ 2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6L16FETE85LF

bahagian bahagian: 192590

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.1V @ 0.1mA,

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Toshiba Semiconductor and Storage

SSM6N57NU,LF

bahagian bahagian: 182932

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 46 mOhm @ 2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

TPC8407,LQ(S

bahagian bahagian: 151036

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, 7.4A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6N7002CFU,LF

bahagian bahagian: 164511

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA, Rds On (Maks) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V, Vgs (th) (Maks) @ Id: 2.1V @ 250µA,

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Toshiba Semiconductor and Storage

TPC8223-H,LQ(S

bahagian bahagian: 150969

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6N44FE,LM

bahagian bahagian: 105414

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6N7002BFE,LM

bahagian bahagian: 179839

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 3.1V @ 250µA,

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Toshiba Semiconductor and Storage

SSM6L39TU,LF

bahagian bahagian: 111677

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 1.8V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 800mA, Rds On (Maks) @ Id, Vgs: 143 mOhm @ 600MA, 4V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N37FU,LF

bahagian bahagian: 156819

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.5V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Ta), Rds On (Maks) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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