Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 18

SQ4949EY-T1_GE3

bahagian bahagian: 10794

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A (Tc), Rds On (Maks) @ Id, Vgs: 35 mOhm @ 5.9A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SIZ790DT-T1-GE3

bahagian bahagian: 117428

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, 35A, Rds On (Maks) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SI1028X-T1-GE3

bahagian bahagian: 148144

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 650 mOhm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI3586DV-T1-E3

bahagian bahagian: 2975

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, 2.1A, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V, Vgs (th) (Maks) @ Id: 1.1V @ 250µA,

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Vishay Siliconix

SI4943BDY-T1-E3

bahagian bahagian: 73640

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.3A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 8.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4904DY-T1-E3

bahagian bahagian: 68509

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Vishay Siliconix

SI4618DY-T1-E3

bahagian bahagian: 113583

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, 15.2A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Vishay Siliconix

SI7901EDN-T1-E3

bahagian bahagian: 3002

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 800µA,

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Vishay Siliconix

SI6562DQ-T1-GE3

bahagian bahagian: 3013

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Maks) @ Id: 600mV @ 250µA (Min),

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Vishay Siliconix

SI1563EDH-T1-GE3

bahagian bahagian: 3023

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.13A, 880mA, Rds On (Maks) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 100µA,

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Vishay Siliconix

SI4946BEY-T1-GE3

bahagian bahagian: 150031

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, Rds On (Maks) @ Id, Vgs: 41 mOhm @ 5.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI1902DL-T1-E3

bahagian bahagian: 198847

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 660mA, Rds On (Maks) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI1539DDL-T1-GE3

bahagian bahagian: 3368

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 700mA (Tc), 460mA (Tc), Rds On (Maks) @ Id, Vgs: 388 mOhm @ 600mA, 10V, 1.07 Ohm @ 400mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA, 3V @ 250µA,

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Vishay Siliconix

SI4565ADY-T1-GE3

bahagian bahagian: 3004

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.6A, 5.6A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SI3552DV-T1-E3

bahagian bahagian: 116715

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SQ3985EV-T1_GE3

bahagian bahagian: 9989

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.9A (Tc), Rds On (Maks) @ Id, Vgs: 145 mOhm @ 2.8A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI4922BDY-T1-E3

bahagian bahagian: 124158

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 1.8V @ 250µA,

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Vishay Siliconix

SI1903DL-T1-GE3

bahagian bahagian: 3011

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 410mA, Rds On (Maks) @ Id, Vgs: 995 mOhm @ 410mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SIZ702DT-T1-GE3

bahagian bahagian: 130304

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 13.8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI4932DY-T1-GE3

bahagian bahagian: 117478

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SQJ500AEP-T1_GE3

bahagian bahagian: 123903

Jenis FET: N and P-Channel, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Rds On (Maks) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 250µA,

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Vishay Siliconix

SIA913ADJ-T1-GE3

bahagian bahagian: 152374

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SQJ844AEP-T1_GE3

bahagian bahagian: 165127

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 16.6 mOhm @ 7.6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI4511DY-T1-E3

bahagian bahagian: 3311

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.2A, 4.6A, Rds On (Maks) @ Id, Vgs: 14.5 mOhm @ 9.6A, 10V, Vgs (th) (Maks) @ Id: 1.8V @ 250µA,

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Vishay Siliconix

SI5511DC-T1-GE3

bahagian bahagian: 3024

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, 3.6A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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Vishay Siliconix

SQJQ960EL-T1_GE3

bahagian bahagian: 13208

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 63A (Tc), Rds On (Maks) @ Id, Vgs: 9 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI4946CDY-T1-GE3

bahagian bahagian: 10817

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.2A (Ta), 6.1A (Tc), Rds On (Maks) @ Id, Vgs: 40.9 mOhm @ 5.2A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI3590DV-T1-E3

bahagian bahagian: 112867

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, 1.7A, Rds On (Maks) @ Id, Vgs: 77 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI5933DC-T1-E3

bahagian bahagian: 2988

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A, Rds On (Maks) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI7949DP-T1-GE3

bahagian bahagian: 93111

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A, Rds On (Maks) @ Id, Vgs: 64 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SIZ340DT-T1-GE3

bahagian bahagian: 178844

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A, 40A, Rds On (Maks) @ Id, Vgs: 9.5 mOhm @ 15.6A, 10V, Vgs (th) (Maks) @ Id: 2.4V @ 250µA,

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Vishay Siliconix

SI5513DC-T1-GE3

bahagian bahagian: 3020

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A, 2.1A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI4214DY-T1-GE3

bahagian bahagian: 138819

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.5A, Rds On (Maks) @ Id, Vgs: 23.5 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI4974DY-T1-E3

bahagian bahagian: 2958

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 4.4A, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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Vishay Siliconix

SIZ704DT-T1-GE3

bahagian bahagian: 146407

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, 16A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 7.8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SQJ942EP-T1_GE3

bahagian bahagian: 9979

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc), 45A (Tc), Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.8A, 10V, 11 mOhm @ 10.1A, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 250µA,

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